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Technical content
75A, 40V , RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 14-Jan-2011 Rev.A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC converter applications.
PACKAGE INFORMATION
TO-252 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 ID @TC=25℃ 75 A Pulsed Drain Current 2 IDM 40 A Continuous Source Current (Diode Conduction) 1 I S 30 A Total Power Dissipation 1 P D @TC=25℃ 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes： 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain
75A, 40V , RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 14-Jan-2011 Rev.A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage V GS(th) 1.0 - - V V DS=VGS, ID=250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0V, VGS=20V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS=32V, VGS=0V - - 25 V DS=32V, VGS=0V, TJ=55°C On-State Drain Current 1 I D(on) 34 - - A V DS=5V, VGS=10V Drain-Source On-Resistance 1 R DS(ON) - - 6 mΩ VGS=10V, ID=75A - - 8 V GS=4.5V, ID=65A Forward Transconductance 1 g fs - 22 - S V DS=15V, ID=75A Diode Forward Voltage V SD - 1.1 - V I S= 34A, VGS= 0V Dynamic 2 Total Gate Charge Q g - 4.0 - nC VDS= 15V VGS= 4.5V ID= 75A Gate-Source Charge Q gs - 1.1 - Gate-Drain Charge Q gd - 1.4 - Turn-on Delay Time T d(on) - 16 - nS VDD=25V ID=34 A VGEN=10V RL=25 Rise Time T r - 5 - Turn-off Delay Time T d(off) - 23 - Fall Time T f - 3 - Source-Ddrain Reverse Recovery Time TRR - 50 - I F=34A, Di/Dt =100A/uS Notes： 1 Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. 2 Guaranteed by design, not s ubject to production testing.