SSD55N03

SSD55N03_11 SECOS | Alldatasheet

Document overview

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Technical content

55A, 25V , R DS(ON) 6m Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 16-Jun-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO -252 (D -Pack) 55N03 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SID55N03 provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

/circle6 Dynamic dv/dt Rating /circle6 Simple Drive Requirement /circle6 Repetitive Avalanche Rated /circle6 Fast Switching MARKING

PACKAGE INFORMATION

TO-252 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC =25° C ID 55 A TC =100° C 35 A Pulsed Drain Current 1 IDM 215 A Total Power Dissipation PD 62.5 W Linear Derating Factor 0.5 W / ° C Single Pulse Avalanche Energy 2 E AS 240 mJ Single Pulse Avalanche Current I AS 31 A Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 110 ° C / W Maximum Thermal Resistance Junction-Case R θJC 2.0 ° C / W Gate Source Drain Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6. 4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1. 6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0. 8 1.20

55A, 25V , R DS(ON) 6m Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 16-Jun-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Dran-Source Breakdown Voltage BV DSS 25 - - V V GS =0, I D = 250 µA Breakdown Voltage Temperature Coefficient △BV DSS /△TJ - 0.037 - V/° C Reference to 25° C, ID =1mA Gate-Threshold Voltage V GS(th) 1.0 - 3.0 V V DS =V GS , I D =250 µA Forward Transconductance g fs - 30 - S V DS =10V, I D =28A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current TJ =25° C IDSS - - 1 µA V DS =25V, V GS =0 TJ =150° C - - 25 µA V DS =20V, V GS =0 Static Drain-Source On-Resistance 3 R DS(ON) - 4.5 6 m Ω VGS =10V, I D =30A - 7 9 V GS =4.5V, I D =30A Total Gate Charge 3 Q g - 16.8 - nC ID =28A VDS =20V VGS =5V Gate-Source Charge Q gs - 6.0 - Gate-Drain (“Miller”) Change Q gd - 4.9 - Turn-on Delay Time 3 T d(on) - 15.1 - nS VDS =15 V ID =28 A VGS =10V R G =3.3 Ω R D =0.53 Ω Rise Time Tr - 4 - Turn-off Delay Time T d(off) - 45.2 - Fall Time Tf - 7.6 - Input Capacitance C ISS - 2326 - pF VGS =0 VDS =25 V f =1.0MHz Output Capacitance C OSS - 331 - Reverse Transfer Capacitance C RSS - 174 - Source-Drain Diode Diode Forward Voltage 3 V SD - - 1.5 V I S=20A, V GS =0, TJ=25° C Continuous Source Current (Body Diode) I S - - 55 A V D =V G =0, V S=1.5V Notes: 1. Pulse width limited by safe operating area. 2. Staring T J=25° C, V DD =20V, L=0.1mH, RG =25, IAS =10A. 3. Pulse width 300 µ≦ s, duty cycle 2≦ ％.

55A, 25V , R DS(ON) 6m Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 16-Jun-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

55A, 25V , R DS(ON) 6m Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 16-Jun-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES