SSD55N03 SECOS | Alldatasheet
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The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters. TO-252 S D G Elektronische Bauelemente SSD55N03 55A, 25V,RDS(ON)6m N-Channel Enhancement Mode Power Mos.FET Ω A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 * Repetitive Avalanche Rated * Dynamic dv/dt Rating * Simple Drive Requirement * Fast Switching RoHS Compliant Product
Electrical Characteristics( Tj=25 C Unless otherwise specified) o Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Static Drain-Source On-Resistance Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 16.8 4.9 15.1 45.2 7.6 2326 331 174 nC nS pF Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V VDS=25V f=1.0MHz VDD=15V ID=28A VGS=10V RG=3.3 RD=0.53 Ω Ω ID=28A VDS=20V VGS=5V _ _ IDSS uA uA m Drain-Source Leakage Current (Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Ω VGS=10V, ID=30A VGS=4.5V, ID=30 A VDS=25V,VGS=0 VDS=20V,VGS=0 Forward Transconductance Gfs S VDS=10V, ID=28A__ o C o C RDS(ON) 4.5 BVDSS BVDS/ Tj 0.037 1.0 3.0 100± V V/ Reference to 25C , ID=1mA oo C V nA Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current VGS(th) IGSS VGS=0V, ID=250uA VGS= 20V± VDS=VGS, ID=250uA Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage3 Continuous Source Current(Body Diode) IS _ A VD=VG=0V,VS=1.5 V 55 VSD __ IS=2 A, VGS=0V,Tj=25 CV1.5 o Notes: Pulse width limited by safe operating area. Pulse width 300us, dutycycle 2%.≦≦ 2.Staring Tj=25 C,VDD=25V,L=0.1mH,RG=25 ,IAS=10A o Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SSD55N03 55A, 25V,RDS(ON)6m N-Channel Enhancement Mode Power Mos.FET Ω
55A, 25V,RDS(ON)6m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature
55A, 25V,RDS(ON)6m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 28 A V DS = 16 V V DS = 20 V V DS = 24 V