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50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET 19-Oct-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) 50N10 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .

FEATURES

 Advanced high cell density Trench technology  Super Low Gate Charge  Excellent CdV/dt effect decline  100% EAS Guaranteed  Green Device Available MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage V GS ±20 V TC=25°C 50 A Continuous Drain Current @VGS=10V 1 TC=100°C ID 28 A Pulsed Drain Current 2 IDM 100 A TC=25°C 90 Total Power Dissipation 4 TA=70°C PD W Single Pulse Avalanche Energy 3 E AS 98 mJ Single Pulse Avalanche Current I AS 41 A Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 62.5 °C / W Maximum Thermal Resistance Junction-Case 1 R θJC 1.4 °C / W Gate Source Drain Date Code A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20

50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET 19-Oct-2012 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 100 - - V V GS=0, ID= 250μA Gate-Threshold Voltage V GS(th) 2.5 - 4.5 V V DS=VGS, ID=250μA Gate-Source Leakage Current I GSS - - ±100 nA V GS= ±20V TJ=25°C - - 1 V DS=80V, VGS=0 Drain-Source Leakage Current TJ=55°C IDSS - - 5 μA VDS=80V, VGS=0 Static Drain-Source On-Resistance 2 R DS(ON) - 18 22 m Ω V GS=10V, ID=30A Total Gate Charge 2 Q g - 27.6 - Gate-Source Charge Q gs - 11.4 - Gate-Drain (“Miller”) Change Q gd - 7.9 - nC ID=30A VDS=80V VGS=10V Turn-on Delay Time 2 T d(on) - 15.6 - Rise Time T r - 17.2 - Turn-off Delay Time T d(off) - 16.8 - Fall Time T f - 9.2 - nS VDS=50V ID=30A VGS=10V RL=3.3 Ω Input Capacitance C iss - 1890 - Output Capacitance C oss - 268 - Reverse Transfer Capacitance C rss - 67 - pF VGS =0 VDS=15V f =1.0MHz Gate Resistance R g 1.9 3.8 Ω f=1MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 53 - - mJ V DD=25V, L=0.1mH, IAS=30A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1A, VGS=0, TJ=25°C Continuous Source Current 1,6 I S - - 45 A Pulsed Source Current 2,6 I SM - - 100 A VD=VG=0, Force Current Reverse Recovery Time T rr - 34 - nS Reverse Recovery Charge Q rr - 47 - nC IF=30A, dI/dt=100A/µs , TJ=25°C Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. 2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=41A 4. The power dissipation is limited by 150°C, junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.

50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET 19-Oct-2012 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

50A , 100V , RDS(ON) 22mΩ N-Ch Enhancement Mode Power MOSFET 19-Oct-2012 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES