SSD50N06J SECOS | Alldatasheet
Document overview
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Technical content
50A, 60V , R DS(O/glyph1197) 20mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 14-Jan-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO -252 (D -Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
SSD50N06J uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURES
/circle6 High density cell design for ultra low R DS(ON) /circle6 Fully characterized Avalanche voltage and current /circle6 Good stability and uniformity with high E AS
APPLICATIONS
/circle6 Power switching applications /circle6 Hard switched and high frequency circuits /circle6 Uninterruptible power supply
PACKAGE INFORMATION
TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current IDM 220 A Single Pulsed Avalanche Energy 1 E AS 115 mJ Power Dissipation PD 1.25 W Thermal Resistance from Junction to Ambient RθJA 100 °C / W Junction and Storage Temperature Range TJ, T STG 150, -50~150 °C Notes: 1. E AS condition: V DD =50V, L=0.5mH, R G =25Ω, TJ=25°C Gate Source Drain A 6. 35 6.90 J 2.30 REF. B 4.95 5.53 K 0.89 REF. C 2.10 2.50 M 0.45 1.14 D 0.41 0.61 N 1.55 Typ. E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20
50A, 60V , R DS(O/glyph1197) 20mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 14-Jan-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Off Characteristics Drain-Source Breakdown Voltage BV DSS 60 - - V V GS =0, I D=250µA Drain-Source Leakage Current IDSS - - 1 µA V DS =60V, V GS =0 Gate-Source Leakage Current IGSS - - ±100 nA V DS =0V, VGS = ±20V On Characteristics 1 Gate-Threshold Voltage V GS(th) 1.5 - 2.5 V V DS =VGS , I D=250µA Static Drain-Source On-Resistance 1 R DS(ON) - 17 20 mΩ V GS =10V, I D =20A Forward Transconductance g fs 24 - - S V DS =25V, I D =20A Dynamic Characteristics Input Capacitance C iss - 900 - Output Capacitance C oss - 104 - Reverse Transfer Capacitance Crss - 33 - pF VDS =25V VGS =0 f=1MHz Switching Characteristics Total Gate Charge Q g - 30 - Gate-Source Charge Q gs - 10 - Gate-Drain (“Miller”) Charge Q gd - 5 - nC VDS =30V VGS =10V I D =50A Turn-on Delay Time T d(on) - 25 - Rise Time T r - 5 - Turn-off Delay Time T d(off) - 50 - Fall Time T f - 6 - nS VDD =30V VGS =10V RG =2.5Ω RL=15Ω I D =2A Source-Drain Diode Characteristics Diode Forward Voltage 1 V SD - - 1.2 V I S=40A, V GS =0 Continuous Source Current I S - - 50 A Pulsed Source Current I SM - - 220 A µotes: 1. Pulse Test: Pulse width≤300µs, duty cycle ≤2%.
50A, 60V , R DS(O/glyph1197) 20mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 14-Jan-2016 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE