SSD50N03-C SECOS | Alldatasheet

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Technical content

51A , 30V , R DS(ON) 9mΩ N-Ch Enhancement Mode Power MOSFET 13-Dec-2017 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 50N03 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 A C D N O P G E FHK JM B TO -252(D -Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD50N03-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications.

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TC =25° C 51 TC =100° C 36 TA=25° C 12.4 Continuous Drain Current, @VGS =10V 1 TA=70° C ID 10.3 A Pulsed Drain Current 2 IDM 110 A Single Pulse Avalanche Energy 3 E AS 128 mJ Single Pulse Avalanche Current I AS 16 A Total Power Dissipation 4 T C =25° C P D 41 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Case 1 R θJC 3.05 ° C/W Maximum Thermal Resistance Junction-ambient 1 R θJA 62.5 ° C/W Part Number Type SSD50N03-C Lead (Pb)-free and Halogen-free Date Code Gate Source Drain A 6. 3 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.4 0.9 N 1.55 Typ. E 6 7.7 O 0 0.15 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2

51A , 30V , R DS(ON) 9mΩ N-Ch Enhancement Mode Power MOSFET 13-Dec-2017 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, ID =250 µA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS =V GS , I D =250 µA Forward Transconductance g fS - 38 - S V DS =5V, I D =30A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25° C - - 1 Drain-Source Leakage Current TJ=55° C IDSS - - 5 µA V DS =24V, VGS =0 - - 9 V GS =10V, I D =30A Static Drain-Source On-Resistance 4 R DS(ON) - - 13.5 m Ω VGS =4.5V, I D =15A Total Gate Charge Q g - 12.6 - Gate-Source Charge Q gs - 4.2 - Gate-Drain (“Miller”) Change Q gd - 5.1 - nC ID =15A VDS =15V VGS =4.5V Turn-on Delay Time T d(on) - 4.6 - Rise Time Tr - 12.2 - Turn-off Delay Time T d(off) - 26.6 - Fall Time Tf - 8 - nS VDD =15V ID =15A VGS =10V R D =3.3 Ω Input Capacitance C iss - 1317 - Output Capacitance C oss - 163 - Reverse Transfer Capacitance C rss - 131 - pF VGS =0 VDS =15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 E AS 32 - - mJ V DD =25V, L=1mH, IAS =8A Source-Drain Diode Continuous Source Current 1 I S - - 51 Pulsed Source Current 2 I SM - - 110 A Diode Forward Voltage 4 V SD - - 1.2 V I S=1A, V GS =0 Reverse Recovery Time T rr - 9.2 - nS Reverse Recovery Charge Q rr - 2 - nC IF=30A, dl/dt=100A/ µs TJ=25° C Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. Pulse width limited by maximum junction temperature , pulse width ≦300us , duty cycle ≦ 2%. 3. The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=1mH,I AS =16A. 4. The data tested by pulsed , pulse width ≦300us , duty cycle ≦ 2% 5. The Min. value is 100% EAS tested guarantee.

51A , 30V , R DS(ON) 9mΩ N-Ch Enhancement Mode Power MOSFET 13-Dec-2017 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

51A , 30V , R DS(ON) 9mΩ N-Ch Enhancement Mode Power MOSFET 13-Dec-2017 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES