SSD45P03-C SECOS | Alldatasheet

Document overview

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Technical content

-45A, -30V , R DS(O/glyph1197) 15mΩ P-Ch Enhancement Mode Power MOSFET 10-Jan-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -252(D -Pack) 45P03 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD45P03-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSD45P03-C meet the RoHS and Green Product With Function reliability approved.

FEATURES

/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TC =25°C -45 TC =100°C -30 TA =25°C -9.6 Continuous Drain Current, @VGS = -10V 1 TA =70°C ID -7.7 A Pulsed Drain Current 3 IDM -150 A Total Power Dissipation T C =25°C P D 45 W Operating Junction and Storage Temperature Range TJ , T STG -55~150 °C Thermal Date Thermal Resistance Junction-Case 1 R θJC 2.8 Thermal Resistance Junction-Ambient 1 62.5 Thermal Resistance Junction-Ambient 2 RθJA 110 °C/W Part Number Type SSD45P03-C Lead (Pb)-free and Halogen-free Gate Source Drain Date Code A C D N O P G E FHK JM B Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.3 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.4 0.9 N 1.55 Typ. E 6 7.7 O 0 0.15 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2

-45A, -30V , R DS(O/glyph1197) 15mΩ P-Ch Enhancement Mode Power MOSFET 10-Jan-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J =25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition s Drain-Source Breakdown Voltage BV DSS -30 - - V V GS=0, I D = -250µA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250µA Forward Transconductance g fs - 30 - S V DS = -5V, I D = -30A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ =25°C - - -1 V DS = -24V, V GS =0 Drain-Source Leakage Current T J =55°C IDSS - - -5 µA VDS = -24V, V GS =0 - - 15 V GS = -10V, I D = -30A Static Drain-Source On-Resistance 4 R DS(ON) - - 25 mΩ VGS = -4.5V, I D = -15A Total Gate Charge Q g - 22 - Gate-Source Charge Q gs - 8.7 - Gate-Drain Change Q gd - 7.2 - nC ID = -15A VDS = -15V VGS = -4.5V Turn-on Delay Time T d(on) - 8 - Rise Time T r - 73.7 - Turn-off Delay Time T d(off) - 61.8 - Fall Time T f - 24.4 - nS VDD = -15V ID = -15A VGS = -10V RG=3.3Ω Input Capacitance C iss - 2215 - Output Capacitance C oss - 310 - Reverse Transfer Capacitance Crss - 237 - pF VGS =0 VDS = -15V f=1MHz Source-Drain Diode Continuous Source Current 1 IS - - -45 A Pulsed Source Current 3 ISM - - -150 A Diode Forward Voltage 4 V SD - - -1.2 V I S= -1A, V GS =0 Reverse Recovery Time t rr - 19 - nS Reverse Recovery Charge Q rr - 9 - nC IF= -15A, dl/dt=100A/µs TJ =25°C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature, pulse width ≦300µs, duty cycle ≦2%. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.

-45A, -30V , R DS(O/glyph1197) 15mΩ P-Ch Enhancement Mode Power MOSFET 10-Jan-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE

-45A, -30V , R DS(O/glyph1197) 15mΩ P-Ch Enhancement Mode Power MOSFET 10-Jan-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE