SSD45N03 SECOS | Alldatasheet

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  • RoHS Compliant * Low Gate Charge * Simple Drive Requirement * Fast Switching Speed The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters. TO-252 S D G Elektronische Bauelemente SSD45N03 45A, 25V,RDS(ON)9m N-Channel Enhancement Mode Power Mos.FET Ω A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20

Electrical Characteristics( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by safe operating area. Pulse width 300us, dutycycle 2%.≦≦ Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Static Drain-Source On-Resistance Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 8.8 57.5 18.5 6.4 1135 200 135 nC nS pF Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V VDS=25V f=1.0MHz VDD=15V ID=20A VGS=10V RG=3.3 RD=0.75 Ω Ω ID=20A VDS=20V VGS= 4.5V _ _ IDSS uA uA m Drain-Source Leakage Current (Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Ω VGS=10V, ID=30A VGS=4.5V, ID=30 A VDS=25V,VGS=0 VDS=20V,VGS=0 Forward Transconductance Gfs S VDS=10V, ID=10A__ o C o C RDS(ON) BVDSS BVDS/ Tj 0.026 1.0 3.0 100± V V/ Reference to 25C , ID=1mA oo C V nA Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current VGS(th) IGSS VGS=0V, ID=250uA VGS= 20V± VDS=VGS, ID=250uA Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage3 Continuous Source Current(Body Diode) IS _ A VD=VG=0V,VS=1.5 V 50 VSD __ IS=2 A, VGS=0VV1.5 2.Staring Tj=25 C,VDD=25V,L=0.1mH,RG=25 ,IAS=10A o Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SSD45N03 45A, 25V,RDS(ON)9m N-Channel Enhancement Mode Power Mos.FET Ω

45A, 25V,RDS(ON)9m N-Channel Enhancement Mode Power Mos.FET Ω -Jun-2002 Rev. A Page 3 of 401 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature

45A, 25V,RDS(ON)9m N-Channel Enhancement Mode Power Mos.FET Ω -Jun-2002 Rev. A Page 4 of 401 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform