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P-Ch Enhancement Mode Power MOSFET -36A, -40V , RDS(ON) 30mΩ Elektronische Bauelemente 14-Jul-2010 Rev.B Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Miniature TO-252 surface mount package saves board space.  High power and current handling capability.  Extended VGS range (±25) for battery pack applications. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) m( ID(A) -40 30@VGS= -10V -36 40@VGS= -4.5V -29 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage V GS ±20 V Continuous Drain Current a ID @TA=25℃ 36 A Pulsed Drain Current b IDM ±40 A Continuous Source Current (Diode Conduction) a I S -30 A Total Power Dissipation a P D @TA=25℃ 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain

P-Ch Enhancement Mode Power MOSFET -36A, -40V , RDS(ON) 30mΩ Elektronische Bauelemente 14-Jul-2010 Rev.B Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) -1 - - V DS= VGS, ID = -250 μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= ±25V Zero Gate Voltage Drain Current I DSS - - -1 μA VDS= -24V, VGS= 0V - - -5 V DS= -24V, VGS=0V, TJ=55°C On-State Drain Current a I D(on) -41 - - A V DS = -5V, VGS= -10V Drain-Source On-Resistance a R DS(ON) - - 30 mΩ VGS= -10V, ID= -36A - - 40 V GS= -4.5V, ID= -29A Forward Transconductance a g fs - 31 - S V DS= -15V, ID= -36A Diode Forward Voltage V SD - -0.7 - V I S= -41 A, VGS= 0 V Dynamic b Total Gate Charge Q g - 13.9 - nC VDS = -15 V VGS = -4.5 V ID = -36 A Gate-Source Charge Q gs - 5.2 - Gate-Drain Charge Q gd - 5.8 - Input Capacitance C iss - 1583 - pF VDS = -15 V VGS = 0 V f = 1MHz Output Capacitance C oss - 278 - Reverse Transfer Capacitance C rss - 183 - Switching Turn-on Delay Time T d(on) - 15 - nS VDD= -15 V ID= -41 A VGEN = -10 V RL= 15  RG= 6  Rise Time T r - 12 - Turn-off Delay Time T d(off) - 62 - Fall Time T f - 46 - Notes a. Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. b. Guaranteed by design, not s ubject to production testing.

P-Ch Enhancement Mode Power MOSFET -36A, -40V , RDS(ON) 30mΩ Elektronische Bauelemente 14-Jul-2010 Rev.B Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

P-Ch Enhancement Mode Power MOSFET -36A, -40V , RDS(ON) 30mΩ Elektronische Bauelemente 14-Jul-2010 Rev.B Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

P-Ch Enhancement Mode Power MOSFET -36A, -40V , RDS(ON) 30mΩ Elektronische Bauelemente 14-Jul-2010 Rev.B Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE