SSD40N10J SECOS | Alldatasheet

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Technical content

40A, 100V , R DS(ON) 17 mΩ N-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO -252 (D -Pack) CJU40N10 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

SSD40N10J is designed to stand high energy in the avalanche mode and switch efficiently. It also offers a drain-to-source diode fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.

FEATURES

/circle6 High density cell design for ultra low R DS(ON) /circle6 Fully characterized avalanche voltage and current /circle6 Good stability and uniformity with high E AS

APPLICATIONS

/circle6 Power switching applications /circle6 Hard switched and high frequency circuits /circle6 Uninterruptible power supply MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 40 A Pulsed Drain Current IDM 160 A Single Pulsed Avalanche Energy 1 E AS 320 mJ Power Dissipation PD 1.25 W Thermal Resistance from Junction to Ambient R θJA 100 ° C / W Lead Temperature for Soldering Purposes@ 1/8’’ from case for 10s T L 260 ° C Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Notes: 1. E AS condition: V DD =50V, L=0.5mH, R G =25 Ω, Starting T J=25° C Gate Source Drain A 6. 35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20

40A, 100V , R DS(ON) 17 mΩ N-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Off Characteristics Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D =250 µA Drain-Source Leakage Current I DSS - - 1 µA V DS =100V, V GS =0 Gate-Source Leakage Current I GSS - - ±100 nA V DS =0V, VGS = ±20V On Characteristics 1 Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Static Drain-Source On-Resistance RDS(ON) - 14 17 m Ω V GS =10V, I D =28A Forward Transconductance g fs 32 - - S V DS =25V, I D =28A Dynamic Characteristics Input Capacitance C iss - 3400 - Output Capacitance C oss - 290 - Reverse Transfer Capacitance C rss - 221 - pF VDS =30V VGS =0 f=1MHz Switching Characteristics Total Gate Charge Q g - 94 - Gate-Source Charge Q gs - 16 - Gate-Drain (“Miller”) Change Q gd - 24 - nC VDS =30V VGS =10V ID =30A Turn-on Delay Time T d(on) - 15 - Rise Time T r - 11 - Turn-off Delay Time T d(off) - 52 - Fall Time T f - 13 - nS VDD =30V VGS =10V R G =2.5 Ω R L=15 Ω ID =2A Source-Drain Diode Characteristics Diode Forward Voltage 1 V SD - - 1.2 V I S=28A, V GS =0 Continuous Source Current I S - - 40 A Pulsed Source Current I SM - - 160 A Notes: 1. Pulse Test : Pulse width ≤300µs, duty cycle ≤2%.

40A, 100V , R DS(ON) 17 mΩ N-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE