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N-Ch Enhancement Mode Power MOSFET 39A, 40V , RDS(ON) 22mΩ Elektronische Bauelemente 24-Sep-2010 Rev.C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC Converter applications. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) m( I D(A) 40 22@VGS= 10V 39 27@VGS= 4.5V 36 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage V GS ±20 V Continuous Drain Current a ID @TA=25℃ 39 A Pulsed Drain Current b IDM 40 A Continuous Source Current (Diode Conduction) a I S 30 A Total Power Dissipation a P D @TA=25℃ 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain
N-Ch Enhancement Mode Power MOSFET 39A, 40V , RDS(ON) 22mΩ Elektronische Bauelemente 24-Sep-2010 Rev.C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) 1.0 - - V V DS= VGS, ID = 250 μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= 20V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS= 24V, VGS= 0V - - 25 V DS= 24V, VGS= 0V, TJ=55°C On-State Drain Current a I D(on) 34 - - A V DS = 5V, VGS= 10V Drain-Source On-Resistance a R DS(ON) - - 22 mΩ VGS= 10V, ID= 39 A - - 27 V GS= 4.5V, ID= 36 A Forward Transconductance a g fs - 22 - S V DS= 15V, ID= 39 A Diode Forward Voltage V SD - 1.1 - V I S= 34 A, VGS= 0 V Pulsed Source Current (Body Diode) a ISM - 5 - A Dynamic b Total Gate Charge Q g - 20 - nC VDS = 15 V VGS = 4.5 V ID = 39 A Gate-Source Charge Q gs - 7 - Gate-Drain Charge Q gd - 7 - Input Capacitance C iss - 1317 - pF VDS = 15 V VGS = 0 V f = 1MHz Output Capacitance C oss - 272 - Turn-on Delay Time T d(on) - 16 - nS VDD= 25 V ID= 34 A VGEN = 10 V RL= 25 Rise Time T r - 5 - Turn-off Delay Time T d(off) - 23 - Fall Time T f - 3 - Notes a. Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. b. Guaranteed by design, not s ubject to production testing.
N-Ch Enhancement Mode Power MOSFET 39A, 40V , RDS(ON) 22mΩ Elektronische Bauelemente 24-Sep-2010 Rev.C Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
N-Ch Enhancement Mode Power MOSFET 39A, 40V , RDS(ON) 22mΩ Elektronische Bauelemente 24-Sep-2010 Rev.C Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE