SSD40N03

SSD40N03_15 SECOS | Alldatasheet

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• Repetitive Avalanche Rated * Dynamic dv/dt Rating * Simple Drive Requirement * Fast Switching The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters. TO-252 S D G Elektronische Bauelemente SSD40N03 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET Ω A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 Absolute Maximum Ratings Drain-Source Voltage 0.4 150 -55~+150 Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Total Power Dissipation ID@TC=100 ID@TC=25 IDM PD@TC=25 C o C o C o W / C C o o Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-case /W CRthj-c 2.5 Thermal Resistance Junction-ambient /W CRthj-a Max. Max. 110 o o Gate-Source Voltage Parameter Symbol Ratings Unit A V V A A W VDS VGS ± 20 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 RoHS Compliant Product

Electrical Characteristics( Tj=25 C Unless otherwise specified) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual o 01-Jun-2002 Rev. A Page 2 of 5 Notes: Pulse width limited by safe operating area. Pulse width 300us, dutycycle 2%.≦≦ Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 7.2 22.5 800 380 133 nC nS pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V VDS=25V f=1.0MHz VDD=15V ID=18A VGS=10V RG=3.3 RD=0.83 Ω Ω ID=18A VDS=24V VGS= 5V _ _ IDSS 250 uA uA m Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=150 ) Ω VGS=10V, ID=18A VGS=4.5V, ID=14 A VDS=30V,VGS=0 VDS=24V,VGS=0 Forward Transconductance Gfs S VDS=10V, ID=18A__ o C o C RDS(ON) BVDSS BVDS/ Tj 0.037 1.0 3.0 100± V V/ Reference to 25C , ID=1mA oo C V nA Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current VGS(th) IGSS VGS=0V, ID=250uA VGS= 20V± VDS=VGS, ID=250uA Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Continuous Source Current(Body Diode) IS _ Pulsed Source Current(Body Diode) _ISM A A VD=VG=0V,VS=1.3 V 150 VSD __ IS= A, VGS=0V.Tj=25CV1.3 Elektronische Bauelemente SSD40N03 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET Ω

36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 Characteristics Curve Fig 5. Maximum Drain Current v.s. Case Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Type Power Dissipation

36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature

-Jun-2002 Rev. A Page 5 of 501 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente SSD40N03 36A, 30V,RDS(ON)21m N-Channel Enhancement Mode Power Mos.FET Ω Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform