SSD408

SSD408 SECOS | Alldatasheet

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• Simple Drive Requirement * Lower On-resistance * Fast Switching Characteristic excellent on-resistance and low gate charge. TO-252 S D G Elektronische Bauelemente SSD408 18A, 30V,RDS(ON)18m N-Channel Enhancement Mode Power Mos.FET Ω A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. RoHS Compliant Product Absolute□Maximum□Ratings□ Parameter□ Symbol□ Ratings□ Unit□ Drain-Source□Voltage□ VDS□ 30□ V□ □ Gate-Source□Voltage□ VGS□ ±20□ V□ □ Continuous□Drain□Current,□VGS@10V□ ID□@TC=25:□ 18□ A□ □ Continuous□Drain□Current,□VGS@10V□ ID□@TC=100:□ 14□ A□ □ Pulsed□Drain□Current1□ IDM□ 70□ A□ □ Total□Power□Dissipation□ PD□@TC=25:□ 60□ W□ □ Single□Pulse□Avalanche□Energy2□ □ EAS□ 60□ mJ□ □ Single□Pulse□Avalanche□Current□ IAS□ 35□ A□ □ Operating□Junction□and□Storage□Temperature□Range□ Tj,□Tstg□ -55□~□+175□ :□ □ Thermal□Data□ Parameter□ Symbol□ Value□ Unit□ Thermal□Resistance□Junction-case□ □ □ □ □ □ □ Max.□ Rthj-c□ 2.5□ :/W□ □ Thermal□Resistance□Junction-ambient□ □ □ □ Max.□ Rthj-a□ 50□ /:W□ □

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SSD408 18A, 30V,RDS(ON)18m Ω Source□Leakage□Current(Tj=25 )□: Electrical□Characteristics□(Tj□=□25 □::::unless□otherwise□specified)□ Parameter□ Symbol□ Min.□ Typ.□ Max.□ Unit□ Test□Conditions□ Drain-Source□Breakdown□Voltage□ BVDSS□ 30□ -□ -□ V□ □ VGS=0,□ID=250uA□ □ Gate□Threshold□Voltage□ VGS(th)□ 1.0□ -□ 2.5□ V□ □ VDS=VGS,□ID=250uA□ □ Forward□Transconductance□ gfs□ -□ 25□ -□ S□ □ VDS=5V,□ID=18A□ □ Drain-Source□Leakage□Current(Tj=25 )□: -□ -□ 1□ uA□ □ VDS=30V,□VGS=0□ □ Drain-Source□Leakage□Current(Tj=55 ):□ IDSS□ Static□Drain-Source□On-Resistance3□ RDS(ON)□ -□ -□ 27□ m□ □ VGS=4.5V,□ID=10A□ □ Total□Gate□Charge3□ Qg□ -□ 19.8□ 25□ Gate-Source□Charge□ Qgs□ -□ 2.5□ -□ Gate-Drain□(“Miller”)□Change□ Qgd□ -□ 3.5□ -□ nC□ □ ID=18A□ □ VDS=15V□ □ VGS=10V□ □ Turn-on□Delay□Time3□ Td(on)□ -□ 4.5□ -□ Turn-off□Delay□Time□ Td(off)□ -□ 17.4□ -□ ns□ □ VDS=15V□ □ VGS=10V□ □ RG=3□ □ RL=0.82□ □ Input□Capacitance□ Ciss□ -□ 1040□ 1250□ Output□Capacitance□ Coss□ -□ 180□ -□ Reverse□Transfer□Capacitance□ Crss□ -□ 110□ -□ pF□ □ VGS=0V□ □ VDS=15V□ □ f=1.0MHz□ □ Source-Drain□Diode□ Parameter□ Symbol□ Min.□ Typ.□ Max.□ Unit□ Test□Conditions□ Continuous□Source□Current□(Body□Diode)□ IS□ -□ -□ 18□ A□ □ □ IS=18A,□VGS=0V□ □ dI/dt=100A/s□ □ Notes:□1.□Pulse□width□limited□by□safe□operating□area.□ □ 3.□Pulse□width 300us,□duty□cycle 2%. □

3 of 5-Jun-2002 Rev. A Page 3 of 401 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 5. Maximum Drain Current v.s. Case Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Type Power Dissipation SSD408 18A, 30V,RDS(ON)18m Ω 0.00001 0.0001 0.001 0.01 0.1 0.0 0.0 0.1

-Jun-2002 Rev. A Page 4 of 401 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics N-Channel Enhancement Mode Power Mos.FET SSD408 18A, 30V,RDS(ON)18m Ω Fig□11.□Normalized□Maximum□Transient□Thermal□Impedance□