SSD35P03 SECOS | Alldatasheet
Document overview
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Technical content
-35A, -30V , R DS(O/glyph1197) 28mΩ P-Ch Enhancement Mode Power MOSFET 31-May-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -252(D -Pack) 35P03 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD35P03 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSD35P03 meet the RoHS and Green Product with Function reliability approved.
FEATURES
/circle6 Advanced high Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available /circle6 TO-252 Package MARKING
PACKAGE INFORMATION
TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TC =25°C -35 A Continuous Drain Current, @VGS =10V 1 TC =100°C ID -22 A Pulsed Drain Current 2 IDM -80 A Power Dissipation T C =25°C P D 50 W Operating Junction and Storage Temperature Range TJ , T STG -55 ~ 150 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 R θJA 62.5 Maximum Thermal Resistance Junction-Case 1 R θJC 2.5 °C / W A C D N O P G E FHK JM B Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6. 35 6.90 J 2.336 REF. B 4.95 5.53 K 0.89 REF. C 2.10 2.50 M 0.45 1.14 D 0.665 Typ. N 1.55 Typ. E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 Gate Source Drain Date Code
-35A, -30V , R DS(O/glyph1197) 28mΩ P-Ch Enhancement Mode Power MOSFET 31-May-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J =25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS=0, ID = -250µA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS=V GS , I D = -250µA Forward Transfer conductance g fs - 20 - S V DS = -5V, I D = -18A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ =25°C - - -1 Drain-Source Leakage Current TJ =55°C IDSS - - -5 µA V DS = -24V, V GS =0 - - 28 V GS = -10V, I D = -18A Static Drain-Source On-Resistance 3 R DS(ON) - - 40 mΩ VGS = -4.5V, I D = -10A Total Gate Charge Q g - 18 - Gate-Source Charge Q gs - 3.3 - Gate-Drain Change Q gd - 4.9 - nC ID = -18A VDS = -15V VGS = -10V Turn-on Delay Time T d(on) - 7 - Rise Time Tr - 11 - Turn-off Delay Time T d(off) - 27 - Fall Time Tf - 8 - nS VDD = -15V ID = -18A VGS = -10V RG=3Ω Input Capacitance C iss - 1345 - Output Capacitance C oss - 194 - Reverse Transfer Capacitance C rss - 158 - pF VGS =0 VDS= -15V f=1.0MHz Source-Drain Diode Forward On Voltage 3 V SD - - -1.2 V I S= -1A, V GS =0 Reverse Recovery Time T rr - 24 - nS Reverse Recovery Charge Q rr - 14 - nC IF= -18A, dl/dt=100A/µs TJ =25°C Notes: 1. The date tested by surface mounted on a 1 inch2 FR-4 board with 2oz copper. 2. The power dissipation is limited by 150°C junction temperature. 3. The data tested by pulsed, pulse width 300us,duty cycle 2%≦ ≦ .
-35A, -30V , R DS(O/glyph1197) 28mΩ P-Ch Enhancement Mode Power MOSFET 31-May-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE
-35A, -30V , R DS(O/glyph1197) 28mΩ P-Ch Enhancement Mode Power MOSFET 31-May-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE