SSD3215B-C SECOS | Alldatasheet
Document overview
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Technical content
6A, 150V , R DS(O/glyph1197) 340mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 07-May-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD3215B-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSD3215B-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING 3215B /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4
PACKAGE INFORMATION
TO-252 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V TC=25°C 6 TC=100°C 4.2 TA=25°C 2 Continuous Drain Current 1 , @ V GS =10V TA=70°C ID 1.6 A Pulsed Drain Current 3 IDM 18 A Total Power Dissipation T C=25°C P D 25 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 62.5 Thermal Resistance Junction-Ambient 2 RθJA 110 Thermal Resistance Junction-Case 1 R θJC 5 °C/W Part Number Type SSD3215B-C Lead (Pb)-free and Halogen-free TO-252(D-Pack) A C D N O P G E FHK JM B Gate Source Drain /boxopen/boxopen /boxopen/boxopen = Date Code A 6. 3 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2 .5 M 0.45 1.14 D 0.4 0.9 N 1.55 Typ. E 6 7.7 O 0 0.15 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2
6A, 150V , R DS(O/glyph1197) 340mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 07-May-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 200 - - V V GS=0, I D =250µA Gate Threshold Voltage V GS(th) 1 - 2.5 V V DS=V GS , I D =250µA Forward Transconductance g fs - 3.9 - S V DS =10V, I D =1A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 V DS =120V, V GS =0 Drain-Source Leakage Current TJ=55°C IDSS - - 10 µA VDS =120V, V GS =0 - - 340 V GS =10V, I D =3A Static Drain-Source On-Resistance 4 R DS(ON) - - 380 mΩ VGS =4.5V, I D =2A Gate Resistance R g - 4.5 - Ω f=1MHz Total Gate Charge Q g - 9.1 - Gate-Source Charge Q gs - 1.2 - Gate-Drain Change Q gd - 2.6 - nC ID =2A VDS=120V VGS =10V Turn-on Delay Time T d(on) - 6 - Rise Time T r - 16.4 - Turn-off Delay Time T d(off) - 21.6 - Fall Time Tf - 15.6 - nS VDD =75V ID =2A VGS =10V RG =6Ω Input Capacitance C iss - 313 - Output Capacitance C oss - 32 - Reverse Transfer Capacitance Crss - 17 - pF VGS =0 VDS=50V f=1MHz Source-Drain Diode Continuous Source Current 1 IS - - 6 Pulsed Source Current 3 ISM - - 18 A Diode Forward Voltage 4 VSD - - 1.2 V V GS =0, I S=2A, T J=25°C Reverse Recovery Time trr - 26.9 - nS Reverse Recovery Charge Qrr - 33.6 - nC IF=2A, dl/dt=100A/µs TJ=25°C Notes: 1. Surface Mounted on 1”x1” FR4 Board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature. 4. Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%.
6A, 150V , R DS(O/glyph1197) 340mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 07-May-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE
6A, 150V , R DS(O/glyph1197) 340mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 07-May-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS CURVE