SSD30N15_15 SECOS | Alldatasheet

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Technical content

22A , 150V , R DS(ON) 69mΩ N-Ch Enhancement Mode Power MOSFET 16-Apr-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO -252 (D -Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFET utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

/circle6 Low RDS(on) provides higher efficiency and extends battery life /circle6 Low thermal impedance copper leadframe TO-252 saves board space /circle6 Fast switching speed /circle6 High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TC =25° C ID 22 A Pulsed Drain Current 2 IDM 60 A Continuous Source Current (Diode Conduction) 1 IS 51 A Total Power Dissipation 1 T C =25° C P D 50 W Operating Junction and Storage Temperature Range TJ, T STG -55~175 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 40 ° C / W Maximum Thermal Resistance Junction-Case R θJC 3 ° C / W Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature Gate Source Drain A 6. 35 6.8 0 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1. 65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 5 H 0.64 1.20

22A , 150V , R DS(ON) 69mΩ N-Ch Enhancement Mode Power MOSFET 16-Apr-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) 1 - - V V DS =V GS, I D =250 µA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS =±20V - - 1 V DS =120V, V GS =0 Zero Gate Voltage Drain Current I DSS - - 25 µA VDS =120V, VGS =0, T J=55° C On-State Drain Current 1 I D(on) 40 - - A V DS =5V, VGS =10V - - 69 V GS =10V, I D =10A Drain-Source On-Resistance 1 R DS(ON) - - 110 m Ω VGS =5.5V, I D =8A Forward Transconductance 1 g fs - 38 - S V DS =15V, I D =10A Diode Forward Voltage V SD - 0.8 - V I S=25.3A, V GS =0 Dynamic 2 Total Gate Charge Q g - 24 - Gate-Source Charge Q gs - 7.8 - Gate-Drain Charge Q gd - 9.7 - nC VDS =75V VGS =5.5V ID =10A Turn-on Delay Time T d(on) - 13 - Rise Time T r - 22 - Turn-off Delay Time T d(off) - 64 - Fall Time T f - 36 - nS VDS =75V ID =10A VGEN =10V R L=7.5 Ω R GEN =6Ω Input Capacitance C iss - 2599 - Output Capacitance C oss - 167 - Reverse Transfer Capacitance C rss - 90 - pF VGS =0 VDS =15 V f =1.0MHz Notes: 1. Pulse test ：Pulse width ≦300 µs, duty cycle ≦2％. 2. Guaranteed by design, not subject to production testing.

22A , 150V , R DS(ON) 69mΩ N-Ch Enhancement Mode Power MOSFET 16-Apr-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

22A , 150V , R DS(ON) 69mΩ N-Ch Enhancement Mode Power MOSFET 16-Apr-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE