SSD30N10-78D SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
21A, 100V , R DS(ON) 78mΩ N-Ch Enhancement Mode Power MOSFET 27-May-2013 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -252(D -Pack) A C D N O P G E FHK JM B RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.
FEATURES
/circle6 Low RDS(on) provides higher efficiency and extends battery life /circle6 Low thermal impedance copper leadframe TO-252 saves board space /circle6 Fast switching speed /circle6 High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
TO-252 2.5K 13’ inch ABSOLUTE MAXIMUM RATINGS (T A = 25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TC =25° C ID 21 A Pulsed Drain Current 2 IDM 36 A Continuous Source Current (Diode Conduction) 1 I S 30 A Power Dissipation 1 T C =25° C PD 50 W Operating Junction and Storage Temperature Range TJ, T STG -55 ~ 175 ° C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 R θJA 50 ° C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 ° C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 6. 4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain
21A, 100V , R DS(ON) 78mΩ N-Ch Enhancement Mode Power MOSFET 27-May-2013 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Source Threshold Voltage V GS(th) 1.0 - - V V DS =V GS , I D =250 µA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS =20V - - 1 V DS =80V, V GS =0 Zero Gate Voltage Drain Current I DSS - - 25 µA VDS =80V, VGS =0,TJ=55° C On-State Drain Current 1 I D(ON) 34 - - A V DS =5V, V GS =10V - - 78 V GS =10V, I D =1A Drain-Source On-Resistance 1 R DS(ON) - - 98 m Ω VGS =4.5V, I D =1A Forward Transconductance 1 g fs - 4.4 - S V DS =40V, I D =1A Diode Forward Voltage V SD - 1.1 - V I S=1A, V GS =0 Dynamic 2 Total Gate Charge Q g - 9 - Gate-Source Charge Q gs - 3 - Gate-Drain Change Q gd - 3 - nC ID =1A VDS =25V VGS =10V Turn-on Delay Time T d(on) - 4 - Rise Time T r - 2 - Turn-off Delay Time T d(off) - 20 - Fall Time T f - 5 - nS VDD =100V ID =1A R L=25 Ω VGEN =10V Notes: 1. Pulse test ： PW ≦ 300 us duty cycle ≦ 2 ％. 2. Guaranteed by design, not subject to production testing.