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N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 38 mΩ 10-Dec-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-252(D-Pack) A C D N O P G E FHK JM B RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life  Low thermal impedance copper leadframce DPAK saves board space  Fast switching speed  High performance trench technology

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current @TC=25℃ 1 ID 19 A Pulsed Drain Current 2 IDM 40 A Continuous Source Current (Diode Conduction) 1 I S 30 A Power Dissipation @TC=25℃ 1 P D 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain

N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 38 mΩ 10-Dec-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Source Threshold Voltage V GS(th) 1.0 - - V V DS = VGS, ID = 250μA Gate-Body Leakage I GSS - - ±100 nA V DS= 0V, VGS= 20V - - 1 V DS= 48V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - 25 μA VDS= 48V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(ON) 34 - - A V DS= 5V, VGS= 10V - - 38 V GS= 10V, ID= 30A Drain-Source On-Resistance 1 R DS(ON) - - 50 mΩ VGS= 4.5V, ID= 26A Forward Transconductance 1 g fs - 22 - S V DS= 15V, ID= 30A Diode Forward Voltage V SD - 1.1 - V I S= 24A, VGS = 0V Dynamic 2 Total Gate Charge Q g - 12.5 - Gate-Source Charge Q gs - 2.4 - Gate-Drain Change Q gd - 2.6 - nC ID= 30 A VDS= 15 V VGS= 4.5 V Turn-on Delay Time T d(on) - 11 - Rise Time T r - 8 - Turn-off Delay Time T d(off) - 19 - Fall Time T f - 6 - nS VDD= 25 V ID= 30 A RL= 25  VGEN= 10 V Notes 1. Pulse test ： PW ≦ 300 us duty cycle ≦ 2 ％. 2. Guaranteed by design, not s ubject to production testing.

N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 38 mΩ 10-Dec-2012 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVES

N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 38 mΩ 10-Dec-2012 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVES