SSD30N03J SECOS | Alldatasheet
Document overview
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Technical content
30A, 30V , R DS(ON) 22m Ω N-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -252 CJU30N03 /box4/box4 /box4/box4 /box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4 /boxopen/boxopen /boxopen/boxopen = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
SSD30N03J uses advanced trench technology and design to provide excellent R DS(on) with low gate charge. It can be used in a wide variety of applications.
FEATURES
/circle6 High density cell design for ultra low RDS(on) /circle6 Fully characterized avalanche voltage and current /circle6 Good stability and uniformity with high E AS /circle6 Excellent package for good heat dissipation /circle6 Special processing technology for high ESD capability APPLICATION /circle6 Power switching application /circle6 Hard switched and high frequency circuits /circle6 Uninterruptible power supply MARKING
PACKAGE INFORMATION
TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 30 A Pulsed Drain Current IDM 80 A Single Pulsed Avalanche Energy 1 E AS 72 mJ Power Dissipation PD 1.25 W Thermal Resistance from Junction to Ambient R θJA 100 ° C/ W Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Notes: 1. E AS condition: V DD =20V, L=0.5mH, R G =25 Ω, Starting T J=25° C. Gate Source Drain A C D N O P G E FHK JM B A 6. 35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2. 50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20
30A, 30V , R DS(ON) 22m Ω N-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Off Characteristics Drain-Source Breakdown Voltage V (BR)DSS 30 - - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current I DSS - - 1 µA V DS =30V, V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0V, V GS = ±20V On Characteristics 1 Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS =V GS, I D =250 µA Static Drain-Source On-Resistance RDS(ON) - - 22 m Ω V GS =10V, I D =15A Dynamic Characteristics Input Capacitance C iss - 938 - Output Capacitance C oss - 142 - Reverse Transfer Capacitance C rss - 99 - pF VDS =15V VGS =0V f=1MHz Switching Characteristics Total Gate Charge Q g - 17.5 - Gate-Source Charge Q gs - 3 - Gate-Drain Charge Q gd - 4.1 - nC VDS =15V VGS =10V ID =20A Turn-on Delay Time T d(on) - 5 - Rise Time T r - 12 - Turn-off Delay Time T d(off) - 19 - Fall Time T f - 6 - nS VDD =15V VGS =10V R G =3Ω R L=0.75 Ω ID =2A Drain-Source Diode Characteristics Diode Forward Voltage 1 V SD - - 1.2 V V GS =0, I S=10A Continuous Drain-Source Diode Forward Current I S - - 30 A Pulsed Drain-Source Diode Forward Current I SM - - 80 A Notes: 1. Pulse test ：Pulse width ≦300 µs, duty cycle ≦2%.
30A, 30V , R DS(ON) 22m Ω N-Ch Enhancement Mode Power MOSFET 13-Dec-2016 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES