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18A , 30V , RDS(ON) 22Ω N-Ch Enhancement Mode Power MOSFET 30-Apr-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) 3055 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .

FEATURES

 Advanced high cell density Trench technology  Super Low Gate Charge  Excellent CdV/dt effect decline  100% EAS Guaranteed  Green Device Available MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±20 V TC=25°C 18 A Continuous Drain Current @VGS=10V 1 TC=100°C ID 10 A Pulsed Drain Current 2 IDM 60 A Total Power Dissipation 4 T C=25°C P D 25 W Single Pulse Avalanche Energy 3 E AS 72 mJ Single Pulse Avalanche Current I AS 21 A Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 110 °C / W Maximum Thermal Resistance Junction-Case 1 R θJC 5 °C / W Gate Source Drain Date Code A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20

18A , 30V , RDS(ON) 22Ω N-Ch Enhancement Mode Power MOSFET 30-Apr-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS=0, ID= 250μA Breakdown Voltage Temperature Coefficient △BVDSS /△TJ - 0.023 - V/°C Reference to 25°C, ID=1mA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS=VGS, ID=250μA Forward Transconductance g fs - 21.6 - S V DS=5V, ID=15A Gate-Source Leakage Current I GSS - - ±100 nA V GS= ±20V TJ=25°C - - 1 V DS=24V, VGS=0 Drain-Source Leakage Current TJ=55°C IDSS - - 5 μA VDS=24V, VGS=0 - - 22 V GS=10V, ID=15A Static Drain-Source On-Resistance 2 R DS(ON) - - 35 mΩ VGS=4.5V, ID=10A Total Gate Charge 2 Q g - 6.2 - Gate-Source Charge Q gs - 2.4 - Gate-Drain (“Miller”) Change Q gd - 2.5 - nC ID=15A VDS=15V VGS=4.5V Turn-on Delay Time 2 T d(on) - 3 - Rise Time T r - 7.6 - Turn-off Delay Time T d(off) - 21 - Fall Time T f - 4 - nS VDS=15V ID=15A VGS=10V RG=3.3 Ω RD=1.9 Ω Input Capacitance C iss - 572 - Output Capacitance C oss - 81 - Reverse Transfer Capacitance C rss - 65 - pF VGS =0 VDS=15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 16 - - mJ V DD=25V, L=0.1mH, IAS=10A Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1A, VGS=0, TJ=25°C, Continuous Source Current 1,6 I S - - 18 A Pulsed Source Current 2,6 I SM - - 60 A VD=VG=0, Force Current Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2 OZ copper. 2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 4. The power dissipation is limited by 150°C, junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation.

18A , 30V , RDS(ON) 22Ω N-Ch Enhancement Mode Power MOSFET 30-Apr-2012 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

18A , 30V , RDS(ON) 22Ω N-Ch Enhancement Mode Power MOSFET 30-Apr-2012 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES