SSD3055 SECOS | Alldatasheet
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*Low Gate Charge *Fast Switching *Simple Drive Requirement TO-252 S D G Elektronische Bauelemente SSD3055 15A, 30V,RDS(ON)26m N-Channel Enhancement Mode Power Mos.FET Ω A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 Absolute Maximum Ratings RoHS Compliant Product
-Jun-2006 Rev. B Page 2 of 501 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Electrical Characteristics ( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by safe operating area. Pulse width 300us, dutycycle 2%.≦≦ Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 4.6 1.1 4.9 22.5 12.2 3.3 160 107 nC nS pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V VDS=25V f=1.0MHz VDD=15V ID=8A VGS=10V RG=3.4 RD=1.9 Ω Ω ID=8 A VDS=24V VGS= 5V _ _ IDSS uA uA m o C o C Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=150 ) Ω VGS=10V, ID=8 A VGS=4.5V, ID=6 A VGS=0V, ID=250uA VGS= 20V± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA RDS(ON) BVDSS BVDS/ Tj 0.037 1.0 3.0 100± V V/ Reference to 25C , ID=1mA oo C V nA Source-Drain Diode VGS(th) IGSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Continuous Source Current(Body Diode) IS _ Pulsed Source Current(Body Diode) _ISM A A VD=VG=0V,VS=1.3 V VSD __ IS=15 A, VGS=0V.Tj=25CV1.3 Gfs 16Forward Transconductance __ S VDS=10V,ID=18A Elektronische Bauelemente SSD3055 15A, 30V,RDS(ON)26m N-Channel Enhancement Mode Power Mos.FET Ω
15A, 30V,RDS(ON)26m N-Channel Enhancement Mode Power Mos.FET Ω Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2006 Rev. B Page 3 of 5 Fig 5. Maximum Drain Current v.s. Case Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Type Power Dissipation
15A, 30V,RDS(ON)26m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2006 Rev.B Page 4 of 5 Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature
01-Jun-2006 Rev. B Page 5 of 5 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente SSD3055 15A, 30V,RDS(ON)26m N-Channel Enhancement Mode Power Mos.FET Ω Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform