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N-Ch Enhancement Mode Power MOSFET 5.0A, 100V , RDS(ON) 0.22Ω Elektronische Bauelemente 11-May-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD2504 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment.
FEATURES
Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel MARKING ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current ID @TC=25℃ 5.0 A ID @TC=100℃ 3.75 A Pulsed Drain Current 1 IDM 20 A Total Power Dissipation P D @TC=25℃ 20 W Linear Derating Factor 0.16 W / °C Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C THERMAL DATA Maximum Thermal Resistance Junction-Ambienta R θJA 110 °C / W Maximum Thermal Resistance Junction-Case R θJC 6.25 °C / W REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain
N-Ch Enhancement Mode Power MOSFET 5.0A, 100V , RDS(ON) 0.22Ω Elektronische Bauelemente 11-May-2010 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Dran-Source Breakdown Voltage BV DSS 100 - - V V GS= 0, ID= 1mA Gate-Threshold Voltage V GS(th) 1.0 - 2.5 V V DS= 10V, ID = 1mA Forward Transconductance g fs - 4 - S V DS= 10V, ID= 2.5A Gate-Source Leakage Current I GSS - - ±100 nA V GS= ±20V Drain-Source Leakage Current I DSS - - 10 μA V DS= 100V, VGS= 0V Static Drain-Source On-Resistance 2 R DS(ON) - - 0.22 Ω VGS= 10V, ID= 2.5A Turn-on Delay Time 2 T d(on) - 9.0 - nS VDD= 30 V ID= 1 A VGS = 10 V RL= 30 RG= 6 Rise Time T r - 9.4 - Turn-off Delay Time T d(off) - 26.8 - Fall Time T f - 2.6 - Input Capacitance C ISS - 975 - pF VGS = 0 V VDS = 25 V f = 1MHz Output Capacitance C OSS - 38 - Reverse Transfer Capacitance C RSS - 27 - SOURCE-DRAIN DIODE Diode Forward Voltage 2 V SD - - 1.5 V I S= 5 A, VGS= 0 V Notes： 1. Pulse width limited by maximum junction temperature. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2 ％.
N-Ch Enhancement Mode Power MOSFET 5.0A, 100V , RDS(ON) 0.22Ω Elektronische Bauelemente 11-May-2010 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
N-Ch Enhancement Mode Power MOSFET 5.0A, 100V , RDS(ON) 0.22Ω Elektronische Bauelemente 11-May-2010 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES