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P-Ch Enhancement Mode Power MOSFET 16A, -60V , RDS(ON) 135mΩ Elektronische Bauelemente 25-Aug-2010 Rev.B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe DPAK saves board space.  Fast switching speed.  High performance trench technology.. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) m( ID(A) -60 135@VGS= -10V 16 190@VGS= -4.5V 14 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current a ID 16 A Pulsed Drain Current b IDM ±40 A Continuous Source Current (Diode Conduction) a I S -15 A Total Power Dissipation a P D 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain

P-Ch Enhancement Mode Power MOSFET 16A, -60V , RDS(ON) 135mΩ Elektronische Bauelemente 25-Aug-2010 Rev.B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) -1 - - V DS= VGS, ID = -250 μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= ±20V Zero Gate Voltage Drain Current I DSS - - -1 μA VDS= -48V, VGS= 0V - - -10 V DS= -48V, VGS=0V, TJ=55°C On-State Drain Current a I D(on) -20 - - A V DS = -5V, VGS= -10V Drain-Source On-Resistance a R DS(ON) - - 135 mΩ VGS= -10V, ID= -28A Forward Transconductance a g fs - 8 - S V DS= -15V, ID= -28A Diode Forward Voltage V SD - - -1.2 V I S= -2.5 A, VGS= 0 V Dynamic b Total Gate Charge Q g - 18 - nC VDS = -30 V VGS = -4.5 V ID = -28 A Gate-Source Charge Q gs - 5 - Gate-Drain Charge Q gd - 2 - Input Capacitance C iss - 570 - pF VDS = -15 V VGS = 0 V f = 1MHz Output Capacitance C oss - 80 - Reverse Transfer Capacitance C rss - 40 - Turn-on Delay Time T d(on) - 8 - nS VDD= -30 V ID= -1 A VGEN = -10 V RL= 30  RG= 6  Rise Time T r - 10 - Turn-off Delay Time T d(off) - 35 - Fall Time T f - 12 - Notes a. Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. b. Guaranteed by design, not s ubject to production testing.

P-Ch Enhancement Mode Power MOSFET 16A, -60V , RDS(ON) 135mΩ Elektronische Bauelemente 25-Aug-2010 Rev.B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

P-Ch Enhancement Mode Power MOSFET 16A, -60V , RDS(ON) 135mΩ Elektronische Bauelemente 25-Aug-2010 Rev.B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES