DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

P-Ch Enhancement Mode Power MOSFET 24A, -30V , RDS(ON) 59mΩ Elektronische Bauelemente 18-May-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable And battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe DPAK saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) m( ID(A) -30 59@VGS= -10V 24 95@VGS= -4.5V 19 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS -30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current a ID @TA=25℃ 24 A Pulsed Drain Current b IDM ±40 A Continuous Source Current (Diode Conduction) a I S -30 A Total Power Dissipation a P D @TA=25℃ 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain

P-Ch Enhancement Mode Power MOSFET 24A, -30V , RDS(ON) 59mΩ Elektronische Bauelemente 18-May-2010 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) -1 - - V DS= VGS, ID = -250 μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= ±20V Zero Gate Voltage Drain Current I DSS - - -1 μA VDS= -24V, VGS= 0V - - -5 V DS= -24V, VGS=0V, TJ=55°C On-State Drain Current a I D(on) -41 - - A V DS = -5V, VGS= -10V Drain-Source On-Resistance a R DS(ON) - - 59 mΩ VGS= -10V, ID= -24A - - 95 V GS= -4.5V, ID= -19A Forward Transconductance a g fs - 31 - S V DS= -15V, ID= -24A Diode Forward Voltage V SD - -0.7 - V I S= -41 A, VGS= 0 V Dynamic b Total Gate Charge Q g - 6.4 - nC VDS = -15 V VGS = -4.5 V ID = -24 A Gate-Source Charge Q gs - 1.9 - Gate-Drain Charge Q gd - 2.5 - Input Capacitance C ISS - 520 - pF VGS = 0 V VDS = -15 V f = 1MHz Output Capacitance C OSS - 130 - Reverse Transfer Capacitance C RSS - 70 - Switching Turn-on Delay Time T d(on) - 10 - nS VDD= -15 V ID= -24 A VGEN = -10 V RL= 15  RG= 6  Rise Time T r - 2.8 - Turn-off Delay Time T d(off) - 53.6 - Fall Time T f - 46 - Notes a. Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. b. Guaranteed by design, not s ubject to production testing.

P-Ch Enhancement Mode Power MOSFET 24A, -30V , RDS(ON) 59mΩ Elektronische Bauelemente 18-May-2010 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

P-Ch Enhancement Mode Power MOSFET 24A, -30V , RDS(ON) 59mΩ Elektronische Bauelemente 18-May-2010 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE