SSD20N20_15 SECOS | Alldatasheet
Document overview
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Technical content
12A , 200V , R DS(ON) 260mΩ N-Ch Enhancement Mode Power MOSFET 13-Sep-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO -252 (D -Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFET utilize a high cell density trench process to provide low R DS(on) and to ensure minimal power loss and heat dissipation.
FEATURES
/circle6 Low RDS(on) provides higher efficiency and extends battery life /circle6 Low thermal impedance copper leadframe TO-252 saves board space /circle6 Fast switching speed /circle6 High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TC =25° C ID 12 A Pulsed Drain Current 2 IDM 50 A Continuous Source Current (Diode Conduction) 1 IS 47 A Total Power Dissipation 1 T C =25° C P D 50 W Operating Junction and Storage Temperature Range TJ, T STG -55~175 ° C Thermal Resistance Rating T≦10 Sec 40 Maximum Thermal Resistance Junction-Ambient
1 Steady Srate
R θJA ° C / W Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature Gate Source Drain Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6. 35 6.8 0 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1. 65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 5 H 0.64 1.20
12A , 200V , R DS(ON) 260mΩ N-Ch Enhancement Mode Power MOSFET 13-Sep-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) 1.0 - - V V DS =V GS, I D =250 µA Gate-Body Leakage I GSS - - ±100 nA V DS =0, VGS =±20V - - 1 V DS =160V, V GS =0 Zero Gate Voltage Drain Current I DSS - - 25 µA VDS =160V, VGS =0, T J=55° C On-State Drain Current 1 I D(on) 24 - - A V DS =5V, VGS =10V - - 260 V GS =10V, I D =9.6A Drain-Source On-Resistance 1 R DS(ON) - - 300 m Ω VGS =5.5V, I D =8.3A Forward Transconductance 1 g fs - 4.4 - S V DS =15V, I D =9.6A Diode Forward Voltage V SD - 0.95 - V I S=23A, V GS =0 Dynamic 2 Input Capacitance C iss - 807 - Output Capacitance C oss - 81 - Reverse Transfer Capacitance C rss - 38 - pF VGS =0 VDS =15V f =1.0MHz Total Gate Charge Q g - 4 - Gate-Source Charge Q gs - 1.7 - Gate-Drain Charge Q gd - 1.8 - nC VDS =100V VGS =4.5V ID =9.6A Turn-on Delay Time T d(on) - 10 - Rise Time T r - 8 - Turn-off Delay Time T d(off) - 27 - Fall Time T f - 13 - nS VDS =100V ID =9.6A VGEN =10V R L=10.5 Ω R GEN =6Ω Notes: 1. Pulse test ：Pulse width ≦300 µs, duty cycle ≦2％. 2. Guaranteed by design, not subject to production testing.
12A , 200V , R DS(ON) 260mΩ N-Ch Enhancement Mode Power MOSFET 13-Sep-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
12A , 200V , R DS(ON) 260mΩ N-Ch Enhancement Mode Power MOSFET 13-Sep-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES