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17A , 90V , RDS(ON) 130mΩ N-Ch Enhancement Mode Power MOSFET 15-Jun-2012 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

FEATURES

 Low R DS(on) provides higher efficiency and extends battery life  Low thermal impedance copper leadframe TO-252 saves board space  Fast switching speed  High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 90 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 TA=25°C ID 17 A Pulsed Drain Current 2 IDM 70 A Continuous Source Current (Diode Conduction) 1 IS 42 A Total Power Dissipation 1 T A=25°C P D 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 40 °C / W Maximum Thermal Resistance Junction-Case R θJC 3 °C / W Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature Gate Source Drain A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20

17A , 90V , RDS(ON) 130mΩ N-Ch Enhancement Mode Power MOSFET 15-Jun-2012 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) 1.0 - - V V DS=VGS, ID =250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS=±20V - - 1 V DS=80V, VGS=0 Zero Gate Voltage Drain Current I DSS - - 25 μA VDS=80V, VGS=0, TJ=55°C On-State Drain Current 1 I D(on) 30 - - A V DS=5V, VGS=10V - - 130 V GS=10V, ID=8.5A Drain-Source On-Resistance 1 R DS(ON) - - 160 mΩ VGS=4.5V, ID=7.5A Forward Transconductance 1 g fs - 15 - S V DS=15V, ID=8.5A Diode Forward Voltage V SD - 1.03 - V I S=21A, VGS=0 Dynamic 2 Input Capacitance C iss - 398 - Output Capacitance C oss - 43 - Reverse Transfer Capacitance C rss - 34 - pF VGS =0 VDS=15V f =1.0MHz Total Gate Charge Q g - 4.9 - Gate-Source Charge Q gs - 1.9 - Gate-Drain Charge Q gd - 2.3 - nC VDS=50V VGS=4.5V ID=8.5A Turn-on Delay Time T d(on) - 4 - Rise Time T r - 6 - Turn-off Delay Time T d(off) - 19 - Fall Time T f - 7 - nS VDS=50V ID=8.5A VGEN=10V RL=3.7Ω RGEN=6Ω Notes: 1. Pulse test ：Pulse width≦300 μs, duty cycle≦2％. 2. Guaranteed by design, not subject to production testing.

17A , 90V , RDS(ON) 130mΩ N-Ch Enhancement Mode Power MOSFET 15-Jun-2012 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

17A , 90V , RDS(ON) 130mΩ N-Ch Enhancement Mode Power MOSFET 15-Jun-2012 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES