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N-Ch Enhancement Mode Power MOSFET 11A, 100V , RDS(ON) 280mΩ Elektronische Bauelemente 11-Aug-2010 Rev.A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe DPAK saves board space.  Fast switching speed.  High performance trench technology. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) m( I D(A) 100 280@VGS= 10V 11 355@VGS= 4.5V 10 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current a ID @TC=25℃ 11 A Pulsed Drain Current b IDM 36 A Continuous Source Current (Diode Conduction) a I S 30 A Total Power Dissipation a P D @TC=25℃ 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain

N-Ch Enhancement Mode Power MOSFET 11A, 100V , RDS(ON) 280mΩ Elektronische Bauelemente 11-Aug-2010 Rev.A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage V GS(th) 1.0 - - V V DS= VGS, ID = 250 μA Gate-Body Leakage I GSS - - ±100 nA V DS = 0V, VGS= 20V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS= 80V, VGS= 0V - - 25 V DS= 80V, VGS= 0V, TJ=55°C On-State Drain Current a I D(on) 34 - - A V DS = 5V, VGS= 10V Drain-Source On-Resistance a R DS(ON) - - 280 mΩ VGS= 10V, ID= 4.5 A - - 355 V GS= 4.5V, ID= 4 A Forward Transconductance a g fs - 5 - S V DS= 15V, ID= 4.5 A Diode Forward Voltage V SD - 1 - V I S= 9 A, VGS= 0 V Dynamic b Total Gate Charge Q g - 10 - nC VDS = 50 V VGS = 5.5 V ID = 4.5 A Gate-Source Charge Q gs - 2 - Gate-Drain Charge Q gd - 7.8 - Turn-on Delay Time T d(on) - 4.8 - nS VDD= 50 V ID= 4.5 A VGEN = 10 V RL= 11.1  Rise Time T r - 4 - Turn-off Delay Time T d(off) - 12.8 - Fall Time T f - 4 - Notes a. Pulse test ：Pulse width ≦ 300 μs, duty cycle ≦ 2 ％. b. Guaranteed by design, not su bject to production testing.