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N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 94 mΩ Elektronische Bauelemente 30-Aug-2010 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO-252(D-Pack) A C D N O P G E FHK JM B RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life  Low thermal impedance copper leadframce DPAK saves board space  Fast switching speed  High performance trench technology PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) RDS(on) m( ID(A) 60 94 @VGS= 10V 19 109 @VGS= 4.5V 18 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage V GS ±20 V Continuous Drain Current a ID @TC=25℃ 19 A Pulsed Drain Current b IDM 40 A Continuous Source Current (Diode Conduction) a I S 30 A Power Dissipation a P D @TC=25℃ 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3.0 °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain

N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 94 mΩ Elektronische Bauelemente 30-Aug-2010 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage V GS(th) 1.0 - - V V DS = VGS, ID = 250μA Gate-Body Leakage I GSS - - ±100 nA V DS= 0V, VGS= 20V Zero Gate Voltage Drain Current I DSS - - 1 μA VDS= 48V, VGS= 0V - - 25 VDS= 48V, VGS= 0V, TJ= 55°C On-State Drain Current a I D(ON) 34 - - A V DS= 5V, VGS= 10V Drain-Source On-Resistance a R DS(ON) - - 94 mΩ VGS= 10V, ID= 19A - - 109 V GS= 4.5V, ID= 18A Forward Transconductance a g fs - 22 - S V DS= 15V, ID= 19A Diode Forward Voltage V SD - 1.1 - V I S= 24A, VGS = 0V Dynamic b Total Gate Charge Q g - 3.6 - nC ID= 19 A VDS= 15 V VGS= 4.5 V Gate-Source Charge Q gs - 1.8 - Gate-Drain Change Q gd - 1.3 - Turn-on Delay Time T d(on) - 16 - nS VDD= 25 V ID= 24 A RL= 25  VGEN= 10 V Rise Time T r - 5 - Turn-off Delay Time T d(off) - 23 - Fall Time T f - 3 - Source-Ddrain Reverse Recovery Time T rr - 50 - IF=24A, Di/Dt=100 A/μs Notes a. Pulse test ： PW ≦ 300 us duty cycle ≦ 2 ％. b. Guaranteed by design, not subject to production testing.

N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 94 mΩ Elektronische Bauelemente 30-Aug-2010 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVES

N-Ch Enhancement Mode Power MOSFET 19A, 60V , RDS(ON) 94 mΩ Elektronische Bauelemente 30-Aug-2010 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVES