SSD20N03 SECOS | Alldatasheet

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Technical content

N-Ch Enhancement Mode Power MOSFET

20 A, 30 V , RDS(ON) 52 mΩ

01-June-2005 Rev. A Page 1 of 5 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD20N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

FEATURES

z Repetitive Avalanche Rated z Simple Drive Requirement z Fast Switching PACKAGE DIMENSIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current ID @TC=25℃ 20 A Continuous Drain Current ID @TC=100℃ 13 A Pulsed Drain Current1 IDM 53 A Total Power Dissipation PD @Ta=25℃ 31 W Linear Derating Factor 0.25 W/℃ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 ℃ THERMAL DATA Parameter Symbol Value Unit Thermal Resistance Junction-case Max. Rθj-case 4.0 ℃ / W Thermal Resistance Junction-ambient Max. Rθj-amb 110 ℃ / W A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.40 3.00 K 0 0.15 E 2.30 Ref. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20

N-Ch Enhancement Mode Power MOSFET 01-June-2005 Rev. A Page 2 of 5 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250uA Breakdown Voltage Temperature ΔBVDSS /ΔTj - 0.037 - V /°C Reference to 25 °C, ID= 1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID= 250uA Forward Transconductance gfs - 3 - S VDS= 10V, ID= 10A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current(Tj=25℃) - - 1 uA VDS= 30V, VGS=0 Drain-Source Leakage Current(Tj=150 )℃ IDSS - - 100 uA VDS= 24V, VGS= 0 - - 52 VGS= 10V, ID= 10A Static Drain-Source On-Resistance RDS(ON) - - 85 mΩ VGS= 4.5V, ID= 8A Total Gate Charge2 Qg - 6.1 - Gate-Source Charge Qgs - 1.4 - Gate-Drain (“Miller”) Change Qgd - 4 - nC ID= 10 A VDS= 24 V VGS= 5 V Turn-on Delay Time2 Td(on) - 4.9 - Rise Time Tr - 29 - Turn-off Delay Time Td(off) - 14.3 - Fall Time Tf - 3.6 - ns VDS=15 V ID= 20 A VGS= 10 V RG= 3.3 Ω RD= 0.75 Ω Input Capacitance Ciss - 290 - Output Capacitance Coss - 160 - Reverse Transfer Capacitance Crss - 45 - pF VGS=0 V VDS=25 V f=1.0 MHz SOURCE-DRAIN DIODE Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.3 V IS=20 A, VGS=0 V, TJ = 25°C Continuous Source Current (Body Diode) IS - - 20 A VD = VG = 0V, VS = 1.3 V Pulsed Source Current (Body Diode)1 ISM - - 53 A Notes: 1. Pulse width limited by safe operating area. 2. Pulse width≦300us, duty cycle≦2%.

N-Ch Enhancement Mode Power MOSFET 01-June-2005 Rev. A Page 3 of 5 CHARACTERISTIC CURVES

N-Ch Enhancement Mode Power MOSFET 01-June-2005 Rev. A Page 4 of 5 CHARACTERISTIC CURVES (cont’d)

N-Ch Enhancement Mode Power MOSFET 01-June-2005 Rev. A Page 5 of 5 CHARACTERISTIC CURVES (cont’d)