SSD2015 VBSEMI | Alldatasheet

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Dual P-Channel 20V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) - 20 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.030 at VGS = - 1.8 V - 3.6 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 P-Channel MOSFET P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe rwise noted Parameter Symbol 10 s Steady S tate Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID - 8.9 - 6.7 A Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 Maximum P ower Dissipationa TA = 25 °C PD 2.0 1.1 WTA = 70 °C 1.3 0.7 Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Ty pical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 46 62.5 °C/WSteady State 80 110 Maximum Junction-to-Foot (D rain) Steady State RthJF 24 32

FEATURES

 Halogen-free According to IEC 61249-2-21 Definition  T renchFET® Power MOSFET  Advanced High Cell Density Process  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Load Switching E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com

Notes: a. P ulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those list ed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 ° C unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless o therwise noted Parameter Symbo l Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 350 µA - 0. 4 - 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Vo ltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µAVDS = - 20 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V - 30 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 8.9 A 0.018 ΩVGS = - 2.5 V, ID = - 8.1 A 0.022 VGS = - 1.8 V, ID = - 3.6 A 0.030 Forward Transconductancea gfs VDS = - 10 V, ID = - 8.9 A 26 S Diode Forwar d Voltagea VSD IS = - 1.7 A, VGS = 0 V - 0.7 - 1.2 V Dynamicb Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 8.9 A 34.5 52 nCGate-Source Charge Qgs 5.1 Gate-Drain Charge Qgd 9.6 Gate Resistan ce Rg 9 Ω Tur n-On Delay Time td(on) VDD = - 10 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 25 40 ns Rise Time tr 46 70 Turn-Off Dela y Time td(off) 230 345 Fall T ime tf 155 235 Source-Drain Rev erse Recovery Time trr IF = - 1.7 A, dI/dt = 100 A/µs 128 200 Output Characteristics 012345 VGS = 5 V thru3 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 1 V 1.5 V Transfer Characteristics TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com

S 25 °C unless otherwise noted On-Resistance vs. Drain Current Gat e Charge Source-Drain Diode Forward Voltage 0.00 0.02 0.04 0.06 0.08 0.10 0 6 12 18 24 30 ID - Drain Current (A) VGS = 2.5 V VGS = 1.8 V VGS = 4.5 V - On-Resistance (Ω )RDS(on) 0 102 03 04 0 VDS = 10 V ID = 8.9 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 1.2 1.4 TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)IS TJ = 25 °C Capacitance On-Resistance vs. Junctio n Temperature On-Resistance vs. Gate-to-Source Voltage 1000 2000 3000 4000 5000 0 2468 1 0 1 VDS - Drain-to-Source Voltage (V) Coss Ciss C - Capacitance (pF) Crss 0.6 0.8 1.0 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 8.9 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) 0.00 0.02 0.04 0.06 0.08 0.10 0 12345 ID = 8.9 A VGS - Gate-to-Source Voltage (V) ID = 3.6 A RDS(on) - On-Resistance (Ω) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com

TYPICAL CHARACTERISTICS 25 ° C unless otherwise noted Threshold Voltage - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 350 µA Variance (V)VGS(th) TJ - Temperature (°C) Single Pulse Power Power (W) Time (s) 1 100 6001010-110-2 Safe Operating Area, Junct ion-to-Ambient 100 0.1 1 10 100 0.01 TA = 25 °C Single Pulse P(t) = 10 DC0.1 IDM Limited ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Dur ation (s) Normalized Effective Tr ansient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com

S 25 °C unless otherwise noted Normalized Therma l Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Dur ation (s) Normalized Effective Tr ansient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.01 4 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index Return to Ind ex E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSD2015 A ll data sheet.com