SSD15N10-C SECOS | Alldatasheet
Document overview
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Technical content
15A, 100V , R DS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 24-Oct-2018 Rev. F Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -252(D -Pack) A C D N O P G E FHK JM B 15N10 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD15N10-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R DSON and gate charge for most of the synchronous buck converter applications. The SSD15N10-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
TO-252 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current,V GS @10V 1 TC =25° C ID 15 A TC =100° C 10.5 A Pulsed Drain Current 3 IDM 30 A Power Dissipation TC =25° C PD 44.6 W TA=25° C 2 W Operating Junction and Storage Temperature Range TJ, T STG -55 ~ 150 ° C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 R θJA 62.5 ° C / W Maximum Thermal Resistance Junction-Ambient 2 110 Maximum Thermal Resistance Junction-Case R θJC 2.8 Part Number Type SSD15N10-C Lead (Pb)-free and Halogen-free Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 6. 3 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.4 0.9 N 1.55 Typ. E 6 7.7 O 0 0.15 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0. 6 1.2 Gate Source Drain
15A, 100V , R DS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 24-Oct-2018 Rev. F Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Drain-Source Breakdown Voltage BV DSS 100 - - V V GS =0, I D =250µA Gate Threshold Voltage V GS(th) 1.0 - 2.5 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current I DSS - - 1 µA VDS =80V, V GS =0, T J=25° C - - 5 V DS =80V, V GS =0, T J=55° C Static Drain-Source On-Resistance 4 R DS(ON) - - 110 m Ω VGS =10V, I D =8A - - 120 V GS =4.5V, I D =6A Total Gate Charge 2 Q g - 26.2 - nC ID =10A VDS =80V VGS =10V Gate-Source Charge Q gs - 4.6 - Gate-Drain (“Miller”) Change Q gd - 5.1 - Turn-on Delay Time 2 T d(on) - 4.2 - nS VDS =50V ID = 10A VGS =10V R G =3.3 Ω Rise Time Tr - 8.2 - Turn-off Delay Time T d(off) - 35.6 - Fall Time Tf - 9.6 - Input Capacitance C iss - 1535 - pF VGS =0 VDS =15V f=1.0MHz Output Capacitance C oss - 60 - Reverse Transfer Capacitance C rss - 37 - Gate Resistance R g - 2 - Ω f=1.0MHz Source-Drain Diode Continuous Source Current 1 I S - - 15 A Pulsed Source Current 3, I SM - - 30 A Forward On Voltage 2 V SD - - 1.2 V V GS =0V , I S=8A , T J=25° C Reverse Recovery Time t rr - 37 - nS IF=10A , dI/dt=100A/ µs , TJ=25° C Reverse Recovery Charge Q rr - 27.3 - nC Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on minimum pad of copper. 3. The power dissipation is limited by 150° C junction temperature. 4. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%
15A, 100V , R DS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 24-Oct-2018 Rev. F Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE
15A, 100V , R DS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 24-Oct-2018 Rev. F Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE