SSD14N02E SECOS | Alldatasheet

Document overview

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Technical content

14.7A, 20V , R DS(ON) 19.5 mΩ N-Ch Enhancement Mode Power MOSFET 22-Feb-2016 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO -252 (D -Pack) 14N02E /box4/box4 /box4/box4/box4/box4 /box4/box4GE RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

SSD14N02E is the best-performance trench N-ch MOSFETs with extreme high cell density, which provides excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. SSD14N02E meets the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super low gate charge /circle6 Excellent CdV/dt effect decline /circle6 ESD protection /circle6 Green device available MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TA=25° C 14.7 Continuous Drain Current@ V GS =4.5V 1 TA=70° C ID 11.6 A Pulsed Drain Current 3 IDM 20 A Total Power Dissipation@ T A=25° C P D 6.3 W t≦10sec 20 Thermal Resistance from Junction to Ambient 1 Steady State 62.5 Thermal Resistance from Junction to Ambient R θJA 110 ° C / W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Date Code A 6. 35 6.90 J 2.336 REF. B 4.95 5.50 K 0.89 REF. C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20

14.7A, 20V , R DS(ON) 19.5 mΩ N-Ch Enhancement Mode Power MOSFET 22-Feb-2016 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS 20 - - V V GS =0, I D =250 µA - - 1 V DS =16V, V GS =0, T J=25° C Drain-Source Leakage Current I DSS - - 30 µA VDS =16V, V GS =0, T J=85° C Gate-Source Leakage Current I GSS - - ±10 µA V DS =0V, VGS = ±10V Gate-Threshold Voltage V GS(th) 0.5 0.7 1.2 V V DS =V GS , I D =250 µA - - 19.5 V GS =4.5V, I D =10A Static Drain-Source On-Resistance 2 R DS(ON) - - 26.5 m Ω VGS =2.5V, I D =5A Input Capacitance C iss - 630 - Output Capacitance C oss - 105 - Reverse Transfer Capacitance C rss - 100 - pF VDS =15V VGS =0 f=1MHz Total Gate Charge Q g - 12 - Gate-Source Charge Q gs - 1.4 - Gate-Drain (“Miller”) Charge Q gd - 4.4 - nC VDS =10V VGS =4.5V ID =10A Turn-on Delay Time T d(on) - 5 - Rise Time T r - 9 - Turn-off Delay Time T d(off) - 25 - Fall Time T f - 5 - nS VDD =10V VGS =4.5V R G =6Ω R L=10 Ω ID =1A Source-Drain Diode Characteristics Diode Forward Voltage 2 V SD - - 1.3 V I S=1.3A, V GS =0 Continuous Source Current 1,4 I S - - 14.7 A Pulsed Source Current 2,4 I SM - - 20 A VG =V D =0V, Force Current Reverse Recovery Time T RR - 16 - nS Reverse Recovery Charge Q RR - 10 - nC IF=10A, dl/dt=100A/ µs, TJ=25° C Notes: 1. The data is tested when the surface of the device is mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. The data is tested by the pulse: Pulse width ≦300µs, duty cycle ≦2%. 3. The Power dissipation is limited by 150° C junction temperature. 4. The data is theoretically the same as I D and I DM , in real applications, the data should be limited by the total power dissipation.

14.7A, 20V , R DS(ON) 19.5 mΩ N-Ch Enhancement Mode Power MOSFET 22-Feb-2016 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

14.7A, 20V , R DS(ON) 19.5 mΩ N-Ch Enhancement Mode Power MOSFET 22-Feb-2016 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE