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Technical content
-12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET 16-Nov-2012 Rev. C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) 12P10 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD12P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
FEATURES
Simple Drive Requirement Lower On-resistance Fast Switching Characteristic RoHS Compliant MARKING
PACKAGE INFORMATION
TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage V GS ±20 V TC=25°C -12 A Continuous Drain Current @VGS=10V TC=100°C ID -10 A Pulsed Drain Current 1 IDM -48 A Total Power Dissipation T C=25°C P D 35.7 W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction- case RθJC 3.5 °C / W Maximum Thermal Resistance Junction-ambient RθJA 110 °C / W Date Code A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 Gate Source Drain
-12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET 16-Nov-2012 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Drain-Source Breakdown Voltage BV DSS -100 - - V V GS=0, ID= -250μA Breakdown Voltage Temperature Coefficient △BVDSS /△TJ - -0.096 - V/°C Reference to 25°C, ID= -1mA Gate-Threshold Voltage V GS(th) -1 - -2.5 V V DS=VGS, ID= -250μA Forward Transconductance g fs - 8 - S V DS= -10V, ID= -8A Gate-Source Leakage Current I GSS - - ±100 nA V GS= ±32V Drain-Source Leakage Current (TJ =25°C) - - -1 V DS= -100V, VGS =0 Drain-Source Leakage Current(TJ=150°C) IDSS - - -25 μA VDS= -80V, VGS =0 - - 210 V GS= -10V, ID= -8A Static Drain-Source On-Resistance3 R DS(ON) - - 250 mΩ VGS= -4.5V, ID= -6A Total Gate Charge 2 Q g - 16 - Gate-Source Charge Q gs - 4.4 - Gate-Drain (“Miller”) Change Q gd - 8.7 - nC ID= -8A VDS= -80V VGS= -4.5V Turn-on Delay Time2 T d(on) - 9 - Rise Time T r - 14 - Turn-off Delay Time T d(off) - 45 - Fall Time T f - 40 - nS VDS= -50V ID= -8A VGS= -10V RG=3.3Ω RD=6.25Ω Input Capacitance C iss - 1590 - Output Capacitance C oss - 110 - Reverse Transfer Capacitance C rss - 70 - pF VGS =0 VDS= -25V f =1.0MHz Gate Resistance Rg - 8 12 Ω f=1.0MHz Source-Drain Diode Forward On Voltage2 V SD - - -1.3 V I S= -12A, VGS=0 Continuous Source Current(Body Diode) I S - - -12 A Pulsed Source Current(Body Diode) 1 I SM - - -48 A VD=VG=0V, VS =1.3V Notes: 1. Pulse width limited by safe operating area. 2. Pulse width ≦300us, duty cycle≦2%.
-12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET 16-Nov-2012 Rev. C Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
-12A , -100V , RDS(ON) 210mΩ P-Channel Enhancement MOSFET 16-Nov-2012 Rev. C Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES