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N-Ch Enhancement Mode Power MOSFET 9.2A, 200V , RDS(ON) 400mΩ 14-Nov-2013 Rev.B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FEATURES

 Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe DPAK saves board space.  Fast switching speed.  High performance trench technology.

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage V GS ±20 V Continuous Drain Current TC=25°C ID 9.2 A Pulsed Drain Current 2 IDM 50 A Continuous Source Current (Diode Conduction) IS 45 A Total Power Dissipation T C=25°C P D 50 W Operating Junction and Storage Temperature Range TJ, TSTG -55~175 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 50 °C / W Maximum Thermal Resistance Junction-Case R θJC 3 °C / W Note: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 Gate Source Drain

N-Ch Enhancement Mode Power MOSFET 9.2A, 200V , RDS(ON) 400mΩ 14-Nov-2013 Rev.B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage V GS(th) 1 - 3.5 V V DS= VGS, ID = 250 μA Gate-Body Leakage I GSS - - ±10 μA V DS = 0V, VGS= ±20V - - 1 V DS= 160V, VGS= 0V Zero Gate Voltage Drain Current I DSS - - 25 μA VDS= 160V, VGS= 0V, TJ=55°C On-State Drain Current 1 I D(on) 34 - - A V DS = 5V, VGS= 10V - - 400 V GS= 10V, ID= 4A Drain-Source On-Resistance 1 R DS(ON) - - 450 mΩ VGS= 5.5V, ID= 3.5A Forward Transconductance 1 g fs - 10 - S V DS=15V, ID=4 A Diode Forward Voltage V SD - 0.95 - V I S=23A, VGS= 0 V Dynamic 2 Input Capacitance C iss - 807 - Output Capacitance C oss - 81 - Reverse Transfer Capacitance C rss - 38 - pF VGS =0 VDS=15V f =1.0MHz Total Gate Charge Q g - 9.1 - Gate-Source Charge Q gs - 3.8 - Gate-Drain Charge Q gd - 3.8 - nC VDS = 100V VGS = 5.5 V ID = 4A Turn-on Delay Time T d(on) - 3.7 - Rise Time T r - 7.7 - Turn-off Delay Time T d(off) - 26.3 - Fall Time T f - 12.4 - nS VDD= 100 V ID= 4A VGEN = 10 V RL= 5  RGEN= 6  Notes: 1. Pulse test ：Pulse width≦300 μs, duty cycle≦2％. 2. Guaranteed by design, not subject to production testing.

N-Ch Enhancement Mode Power MOSFET 9.2A, 200V , RDS(ON) 400mΩ 14-Nov-2013 Rev.B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

N-Ch Enhancement Mode Power MOSFET 9.2A, 200V , RDS(ON) 400mΩ 14-Nov-2013 Rev.B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE