DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

9A , 100V , RDS(ON) 152mΩ N-Ch Enhancement Mode Power MOSFET 13-Oct-2014 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 09N10 A C D N O P G E FHK JM B TO-252(D-Pack) RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD09N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .

FEATURES

 Advanced high cell density Trench technology  Super Low Gate Charge  Excellent CdV/dt effect decline  100% EAS Guaranteed  Green Device Available MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage V GS ±20 V TC=25°C 9 A Continuous Drain Current, VGS=10V 1 TC=100°C ID 5.7 A Pulsed Drain Current 2 IDM 18 A TC=25°C 31 Total Power Dissipation 3 TA=25°C PD W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Thermal Resistance Junction-Case 1 R θJC 4 °C / W Maximum Thermal Resistance Junction-ambient 1 R θJA 62 °C / W Date Code A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 Gate Source Drain

9A , 100V , RDS(ON) 152mΩ N-Ch Enhancement Mode Power MOSFET 13-Oct-2014 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 100 - - V V GS=0, ID=250μA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ - 0.122 - V/°C Reference to 25°C, ID=1mA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS=VGS, ID=250μA Gate-Source Leakage Current I GSS - - ±100 nA V GS= ±20V Forward Transconductance g fS - 19 - S V DS=5V, ID=8A TJ=25°C - - 1 Drain-Source Leakage Current TJ=55°C IDSS - - 30 μA V DS=80V, VGS=0 - - 152 V GS=10V, ID=8A Static Drain-Source On-Resistance 2 R DS(ON) - - 158 mΩ VGS=4.5V, ID=6A Total Gate Charge 2 Q g - 25.5 - Gate-Source Charge Q gs - 4.2 - Gate-Drain (“Miller”) Change Q gd - 4.3 - nC ID=8A VDS=60V VGS=10V Turn-on Delay Time 2 T d(on) - 17.3 - Rise Time T r - 2.8 - Turn-off Delay Time T d(off) - 50 - Fall Time T f - 2.8 - nS VDS=50V ID=1A VGS=10V RD=3.3 Ω Input Capacitance C iss - 1077 - Output Capacitance C oss - 46 - Reverse Transfer Capacitance C rss - 32 - pF VGS =0 VDS=15V f =1.0MHz Gate Resistance R g - 2 3 Ω f =1.0MHz Source-Drain Diode Continuous Source Current 1,4 I S - - 9 A Pulsed Source Current 2,4 I SM - - 18 A VG = VD=0, Force Current Diode Forward Voltage 2 V SD - - 1.2 V I S=1A, VGS=0 Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 3. The power dissipation is limited by 150℃ junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation

9A , 100V , RDS(ON) 152mΩ N-Ch Enhancement Mode Power MOSFET 13-Oct-2014 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

9A , 100V , RDS(ON) 152mΩ N-Ch Enhancement Mode Power MOSFET 13-Oct-2014 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES