SSD05N60J SECOS | Alldatasheet

Document overview

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Technical content

5A, 600V , R DS(ON) 2.5 Ω N-Ch Enhancement Mode Power MOSFET 28-Dec-2015 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -252 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. It is designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits.

FEATURES

/circle6 High current rating /circle6 Lower R DS(ON) /circle6 Lower capacitance /circle6 Lower total gate charge /circle6 Tighter VSD specifications /circle6 Specified avalanche energy

PACKAGE INFORMATION

TO-252 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 5 A Pulsed Drain Current IDM 20 A Single Pulsed Avalanche Energy 1 E AS 250 mJ Power Dissipation PD 1.25 W Maximum Lead Temperature for Soldering Purposes@ 5-second duration T L 260 ° C Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient R θJA 100 ° C/ W Gate Source Drain A C D N O P G E FHK JM B A 6. 35 6.90 J 2.186 2.386 B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20

5A, 600V , R DS(ON) 2.5 Ω N-Ch Enhancement Mode Power MOSFET 28-Dec-2015 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test condition Off Characteristics Drain-Source Breakdown Voltage BV DSS 600 - - V V GS =0, I D =250µA Drain-Source Diode Forward Voltage 2 V SD - - 1.4 V V GS =0, I S=4.5A Drain-Source Leakage Current I DSS - - 1 µA V DS =600V, V GS =0 Gate-Source Leakage Current 2 I GSS - - ±100 nA V DS =0V, V GS =±30V On Characteristics 2 Gate Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Static Drain-Source On-Resistance R DS(ON) - - 2.5 Ω V GS =10V, I D =2.25A Dynamic Characteristics Input Capacitance C iss - 670 - Output Capacitance C oss - 72 - Reverse Transfer Capacitance C rss - 8.5 - pF VDS =25V VGS =0 f=1MHz Switching Characteristics Turn-on Delay Time T d(on) - 30 - Rise Time Tr - 90 - Turn-off Delay Time T d(off) - 85 - Fall Time Tf - 100 - nS VDD =300V VGS =10V R G =25 Ω ID =4.5A Notes: 1. E AS condition: L=16mH, IL=5A, V DD =50V, R G =25 Ω, Starting TJ=25° C. 2. Pulse Test: Pulse width ≦300 µs, duty cycle ≦2%.

5A, 600V , R DS(ON) 2.5 Ω N-Ch Enhancement Mode Power MOSFET 28-Dec-2015 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES