SSD02N65SL_15 SECOS | Alldatasheet
Document overview
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Technical content
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 23-Dec -2013 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -252 RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD02N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V TC =25° C 2 A Continuous Drain Current TC =100° C ID 1.3 A Pulsed Drain Current IDM 8 A TC =25° C 36 Total Power Dissipation Derate above 25° C PD 0.29 W Single Pulse Avalanche Energy 1 E AS 100 mJ Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 110 ° C / W Maximum Thermal Resistance Junction-Case R θJC 3.47 ° C / W Notes: 1. L=30mH,I AS =2.37A, V DD =60V, R G =25 Ω, Starting T J =25° C Gate Source Drain A C D N O P G E FHK JM B A 6. 35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 1.14 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.80 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 23-Dec -2013 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 650 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±30V Drain-Source Leakage Current I DSS - - 1 µA V DS =650V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - 4.3 4.8 Ω V GS =10V, I D =1A Total Gate Charge 1.2 Q g - 5.83 - Gate-Source Charge 1.2 Q gs - 1.73 - Gate-Drain Change 1.2 Q gd - 2 - nC ID =2A VDS =520V VGS =10V Turn-on Delay Time 1.2 T d(on) - 10.67 - Rise Time 1.2 Tr - 20 - Turn-off Delay Time 1.2 T d(off) - 12.4 - Fall Time 1.2 Tf - 18 - nS VDD =325V ID =2A R G =25 Ω Input Capacitance C iss - 261.8 - Output Capacitance C oss - 34.3 - Reverse Transfer Capacitance C rss - 1.3 - pF VGS =0 VDS =25V f =1.0MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.4 V I S=2A, V GS =0 Continuous Source Current I S - - 2 A Pulsed Source Current I SM - - 8 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time T rr - 368.88 - ns Reverse Recovery Charge Q rr - 1.08 - µC IS=2A,V GS =0, dl F/dt=100A/ µS Notes: 1. Pulse Test: Pulse width ≦300 µS, Duty cycle ≦2% 2. Essentially independent of operating temperature.
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 23-Dec -2013 Rev. A Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 23-Dec -2013 Rev. A Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
2A , 650V , R DS(ON) 4.8 Ω N-Ch Enhancement Mode Power MOSFET 23-Dec -2013 Rev. A Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL TEST CURVES