SSD01L60 SECOS | Alldatasheet
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- RoHs Compliant * Simple Drive Requirement * Fast Switching Speed * Repetitive Avalanche Rated The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. TO-252 S D G Elektronische Bauelemente SSD01L60 1A, 600V,RDS(ON)12 N-Channel Enhancement Mode Power Mos.FET Ω A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 Absolute Maximum Ratings
Electrical Characteristics( Tj=25 C Unless otherwise specified) o 1.1 6.6 11.7 9.2 170 30.7 5.1 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=300V ID=1 A VGS=10V RG=3.3 RD=300 Ω Ω ID=1 A VDS=480V VGS= 10V _ _ 0.8 Ω VGS=10V, ID=0.5A S VDS=10V, ID=0.5A__ Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Static Drain-Source On-Resistance Forward Transconductance Gfs RDS(ON) 600 0.8 2.0 4.0 100 100 V V/ Reference to 25C , ID=1mA oo C V nA uA uA VGS=0V, ID=250uA VGS= 30V± VDS=600V,VGS=0 VDS=480 V,VGS=0 VDS=VGS, ID=250uA BVDSS BVDS/ Tj IDSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS o C o C 3 _ Elektronische Bauelemente SSD01L60 1A, 600V,RDS(ON)12 N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Continuous Source Current(Body Diode) IS _ =1.2 V1 =1A1.2 Pulsed Source Current(Body Diode) _ISM A A VD=VG=0V,VS VSD __ IS , VGS=0V.Tj=25CV o Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25:, VDD=50V, L=10mH, RG=25Ł, IAS=1.0A. 3. Pulse width 300us, duty cycle 2%.
01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Elektronische Bauelemente SSD01L60 1A, 600V,RDS(ON)12 N-Channel Enhancement Mode Power Mos.FET Ω
01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SSD01L60 1A, 600V,RDS(ON)12 N-Channel Enhancement Mode Power Mos.FET Ω