SSA85N80J

SSA85N80J SECOS | Alldatasheet

Document overview

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Technical content

80A, 85V , R DS(ON) 8.5 mΩ N-Ch Enhancement Mode Power MOSFET 15-Feb-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220J -A RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

SSA85N80J uses advanced trench technology and design to provide excellent R DS(on) with low gate charge. It has good stability and uniformity with high EAS . This device is suitable for the use in PWM, load switching and general purpose applications.

FEATURES

/circle6 High density cell design for ultra low RDS(on) /circle6 Lead free product is acquired /circle6 Good stability and uniformity with high E AS /circle6 Excellent package for good heat dissipation /circle6 Special processing technology for high ESD capability /circle6 Specially designed for convertors and power controls /circle6 Fully characterized avalanche voltage and current /circle6 Fast switching APPLICATION /circle6 Power switching application /circle6 Hard switched and high frequency circuits /circle6 Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 85 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 80 A Pulsed Drain Current 1 IDM 320 A TA=25° C, without heat sink 2 Power Dissipation TC =25° C, with heat sink PD 170 W Single Pulsed Avalanche Energy 3 E AS 620 mJ Thermal Resistance from Junction to Ambient R θJA 62.5 ° C/ W Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Gate Source Drain A 9.91 10.25 I 4.98 5.18 B 3.4 3.8 J 2.85 3.25 C 2.65 2.95 K 4.4 4.6 D 12.65 12.95 L 1.2 1.4 E 1.17 1.37 M 8.95 9.75 F 0.71 0.91 N 2.25 2.55 G 12.9 13.4 Q 0.33 0.65 H 2.540 TYP.

80A, 85V , R DS(ON) 8.5 mΩ N-Ch Enhancement Mode Power MOSFET 15-Feb-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage V (BR)DSS 85 - - V V GS =0, I D =250 µA Gate-Threshold Voltage 2 V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Zero Gate Voltage Drain Current I DSS - - 1 µA V DS =85V, V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0V, V GS = ±20V Static Drain-Source On-Resistance 2 R DS(ON) - - 8.5 m Ω V GS =10V, I D =40A Forward Transconductance 2 g FS - 60 - S V DS =10V, I D =40A Dynamic Characteristics Input Capacitance C iss - 4400 - Output Capacitance C oss - 340 - Reverse Transfer Capacitance C rss - 260 - pF VDS =25V VGS =0 f=1MHz Switching Characteristics Total Gate Charge Q g - 100 - Gate-Source Charge Q gs - 20 - Gate-Drain Charge Q gd - 30 - nC VDS =30V VGS =10V ID =30A Turn-on Delay Time T d(on) - 18 - Rise Time T r - 12 - Turn-off Delay Time T d(off) - 56 - Fall Time T f - 15 - nS VDD =30V VGS =10V R G =2.5 Ω R L=15 Ω ID =2A Source-Drain Diode Characteristics Diode Forward Current I S - - 80 A Diode Pulsed Forward Current I SM - - 320 A Diode Forward Voltage 2 V SD - - 1.2 V V GS =0, I S=20A Body Diode Reverse Recovery Time T RR - - 88.3 A I F=75A, dl/dt=100A/ µs Body Diode Reverse Recovery Charge Q RR - - 65.9 A I F=75A, dl/dt=100A/ µs Notes: 1. Repetitive rating: The pulse width is limited by the junction temperature. 2. Pulse test ：Pulse width 300µs, duty cycle 2≦ ≦ %. 3. E AS condition: V DD =40V, L=0.5mH, V GS =10V, R g=25 Ω, TJ=25° C.

80A, 85V , R DS(ON) 8.5 mΩ N-Ch Enhancement Mode Power MOSFET 15-Feb-2016 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES