SSA70N90J SECOS | Alldatasheet

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Technical content

90A, 70V , R DS(ON) 7.5 mΩ N-Ch Enhancement Mode Power MOSFET 15-Feb-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220J -A RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

SSA70N90J uses advanced trench technology and design to provide excellent R DS(on) with low gate charge. This device is suitable for the use in a wide variety of applications.

FEATURES

/circle6 High density cell design for ultra low RDS(on) /circle6 Lead free product is acquired /circle6 Good stability and uniformity with high E AS /circle6 Excellent package for good heat dissipation /circle6 Special processing technology for high ESD capability APPLICATION /circle6 Power switching application /circle6 Hard switched and high frequency circuits /circle6 Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 70 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 90 A Pulsed Drain Current 1 IDM 320 A Single Pulsed Avalanche Energy 4 E AS 580 mJ Thermal Resistance from Junction to Ambient 2 R θJA 62.5 ° C/ W Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Gate Source Drain A 9.91 10.25 I 4.98 5.18 B 3.4 3.8 J 2.85 3.25 C 2.65 2.95 K 4.4 4.6 D 12.65 12.95 L 1.2 1.4 E 1.17 1.37 M 8.95 9.75 F 0.71 0.91 N 2.25 2.55 G 12.9 13.4 Q 0.33 0.65 H 2.540 TYP.

90A, 70V , R DS(ON) 7.5 mΩ N-Ch Enhancement Mode Power MOSFET 15-Feb-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage V (BR)DSS 70 - - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current I DSS - - 1 µA V DS =70V, V GS =0 Gate-Body Leakage Current I GSS - - ±100 nA V DS =0V, V GS = ±20V Gate-Threshold Voltage 3 V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Static Drain-Source On-Resistance 3 R DS(ON) - - 7.5 m Ω V GS =10V, I D =40A Forward Transconductance 3 g FS - 60 - S V DS =5V, I D =40A Diode Forward Voltage 3 V SD - - 1.2 V V GS =0, I S=20A Dynamic Characteristics Input Capacitance C iss - 4871 - Output Capacitance C oss - 630.6 - Reverse Transfer Capacitance C rss - 410.3 - pF VDS =15V VGS =0 f=1MHz Gate Resistance R g - 0.63 - Ω V DS =V GS =0, f=1MHz Switching Characteristics Total Gate Charge Q g - 85.7 - Gate-Source Charge Q gs - 23.2 - Gate-Drain Charge Q gd - 31.2 - nC VDS =48V VGS =10V ID =84A Turn-on Delay Time T d(on) - 36.1 - Rise Time Tr - 54.3 - Turn-off Delay Time T d(off) - 85.2 - Fall Time Tf - 37.3 - nS VDS =30V VGS =10V R GEN =10 Ω ID =42A Body Diode Reverse Recovery Time 3 T RR - - 88.3 A I F=84A, dl/dt=100A/ µs Body Diode Reverse Recovery Charge 3 Q RR - - 65.9 A I F=84A, dl/dt=100A/ µs Notes: 1. Repetitive rating: The pulse width is limited by the junction temperature. 2. The surface of the device is mounted on a FR4 board, t ≦10s. 3. Pulse test ：Pulse width ≦300 µs, duty cycle ≦2%. 4. E AS condition: V DD =37.5V, L=0.5mH, R G =25 Ω, starting T J=25° C.

90A, 70V , R DS(ON) 7.5 mΩ N-Ch Enhancement Mode Power MOSFET 15-Feb-2016 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RATINGS AND CHARACTERISTIC CURVES