SSA55H12J SECOS | Alldatasheet

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Technical content

120A, 55V , R DS(ON) 5.5 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 28-Jun-2016 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220J -A RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

SSA55H12J uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. This device is suitable for the use in a wide variety of applications.

FEATURES

/circle6 High density cell design for ultra low RDS(on) /circle6 Fully characterized avalanche voltage and current /circle6 Good stability and uniformity with high E AS /circle6 Excellent package for good heat dissipation /circle6 Special processing technology for high ESD capability APPLICATION /circle6 Power switching application /circle6 Hard switched and high frequency circuits /circle6 Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 55 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 120 A Pulsed Drain Current IDM 420 A Single Pulsed Avalanche Energy 1 E AS 1100 mJ Thermal Resistance from Junction to Ambient R θJA 62.5 ° C/ W Maximum Lead Temperature for Soldering Purposes@ 1/8’’ from Case for 5 seconds TL 260 ° C Junction and Storage Temperature Range TJ, T STG 150, -55~150 ° C Gate Source Drain REF. Millimeter REF. Mil limeter Min. Max. Min. Max. A 9.91 10.25 I 4.98 5.18 B 3.4 3.8 J 2.85 3.25 C 2.65 2.95 K 4.4 4.6 D 12.65 12.95 L 1.2 1.4 E 1.17 1.37 M 8.95 9.75 F 0.71 0.91 N 2.25 2.55 G 12.9 13.4 Q 0.33 0.65 H 2.540 TYP.

120A, 55V , R DS(ON) 5.5 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 28-Jun-2016 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Off Characteristics Drain-Source Breakdown Voltage V (BR)DSS 55 65 - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current I DSS - - 1 µA VDS =55V, V GS =0 - - 100 VDS =0.8 × Rated V(BR)DSS , VGS =0, TJ=125° C Gate-Body Leakage Current I GSS - - ±100 nA V DS =0V, V GS = ±20V On Characteristics 2 Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , ID =250 µA Static Drain-Source On-Resistance RDS(ON) - 4.1 5.5 m Ω V GS =10V, I D =40A Forward Transconductance g FS - 50 - S V DS =25V, I D =40A Dynamic Characteristics Input Capacitance C iss - 4900 - pF VDS =25V VGS =0 f=1MHz Output Capacitance C oss - 470 - Reverse Transfer Capacitance C rss - 460 - Switching Characteristics 2 Total Gate Charge Q g - 125 - nC VDS =30V VGS =10V ID =30A Gate-Source Charge Q gs - 24 - Gate-Drain Charge Q gd - 49 - Turn-on Delay Time T d(on) - 20 - nS VDS =30V VGS =10V R GEN =2.5 Ω ID =2A Rise Time T r - 19 - Turn-off Delay Time T d(off) - 70 - Fall Time T f - 30 - Source-Drain Diode Characteristics Diode Forward Voltage 2 V SD - - 1.2 V V GS =0, IS=40A Continuous Drain-Source Diode Forward Current

3 IS - - 120 A

Notes: 1. E AS condition: V DD =30V, L=0.5mH, R G =25 Ω, starting T J=25° C. 2. Pulse test ：Pulse width ≦300 µs, duty cycle ≦2%. 3. The surface of the device is mounted on a FR4 board, t ≦10s.

120A, 55V , R DS(ON) 5.5 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 28-Jun-2016 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES