SS8550W DSK | Alldatasheet
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Technical content
Silicon Epitaxial Planar Transistor SS8550W
FEATURES
z Collector Current.(I C = 1.5A） z Complementary To SS8550W. z Collector Dissipation: P C =0.2W (T C =25°C)
APPLICATIONS
z High Collector Current. SOT-323
ORDERING INFORMATION
Type No. Marking Package Code SS8550W Y2 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -1.5 A P C Collector Dissipation 0.2 W T T stg Junction and Storage Temperature -55~150 ℃ Pb Lead-free Diode Semiconductor Korea www.diode.kr
Silicon Epitaxial Planar Transistor SS8550W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO I C =-100μA,I E =0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-0.1mA,I B =0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100μA,I C =0 -5 V Collector cut-off current I CBO V CB =-40V,I E =0 -0.1 μA Collector cut-off current I CEO V CE =-20V,I B =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.1 μA V CE =-1V,I C =-100mA 120 400 DC current gain h FE V CE =-1V,I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B = -80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B = -80mA -1.2 V Transition frequency f T V CE =-10V, I C = -50mA f=30MHz 100 MHz Output capacitance C ob V CB =-10V,I E =0,f=1MHz 20 pF Base-emitter voltage V BEF I E =-1.5A -1.6 V CLASSIFICATION OF h FE(1) Rank L H J Range 120-200 200-350 300-400 www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor SS8550W TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor SS8550W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J 0.1Typical K 2.1 2.3 All Dimensions in mm Device Package Shipping SS8550W SOT-323 3000/Tape&Reel www.diode.kr Diode Semiconductor Korea