SS8550T SECOS | Alldatasheet
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Technical content
Any changing of specification will not be informed individual SS8550T PNP Silicon General Purpose Transistor Power dissipation PCM : 1 W Collector Current ICM : -1.5 A Collector-base voltage
FEATURES
http://www.SeCoSGmbH.com Elektronische Bauelemente Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100ȰAđ IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mAđ IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100ȰAđ IC=0 -5 V Collector cut-off current ICBO VCB=-40 V , I E=0 -0.1 ȰA Collector cut-off current ICEO VCE=-20V , I B=0 -0.1 ȰA Emitter cut-off current IEBO VEB=- 5 V, I C=0 -0.1 ȰA HFE(1) VCE=-1V , I C= -100mA 85 400 DC current gain HFE(2) VCE=-1V , I C= -800mA 40 Collector-emitter saturation voltage VCE(sat) I C=-800 mA , IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) I C=-800 mA, IB=-80mA -1.2 V Transition frequency f T VCE=-10V, I C= -50mA f=30MHz
100 MHz
CLASSIFICATION OF h FE(1) Rank B C D E Range 85-160 120-200 160-300 300-400 ELECTRICAL CHARACTERISTICS ( Tamp.=25 O C unless otherwise specified) V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55 O C ~ + 150 O C 1 2 TO-92 1. EMITTER 2. BASS . COLLECTOR 0 1 - J u n - 2 0 0 2 R e v . A P a g e 1 o f 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free