SS8550 WEITRON | Alldatasheet
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Technical content
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc) Emitter Cutoff Current(V = -5 Vdc, I =0 Vdc) 1. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%<< V(BR)CEO V(BR)CBO V(BR)EBO ICBO I -5.0 -0.1 Vdc Vdc Vdc uAdc uAdc SS8550 Tstg PD C C WEITRON http://www.weitron.com.tw Plastic-Encapsulate Transistors PNP Silicon (Ta=25 C) -40 -5.0 -1.5 -25 EMITTER BASE Total Device Dissipation T =25 C 1.0 W Junction Temperature T j 150 Storage Temperature -55 to +150 -25 -40 -0.1 EB EBO A TO-92 1 2 31. EMITTER 2. BASE 3. COLLECTOR COLLECTOR SS8550=SS8550D DEVICE MARKING (1) C
Transition Frequency fT MHz Collector-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) Base-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) hFE(1) hFE(2) VCE(sat) VBE(sat) Vdc Vdc ON CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol UnitMin Max - - 100 SS8550 WEITRON http://www.weitron.com.tw (IC= -100 mAdc, VCE=-1.0 Vdc) (IC= -800 mAdc, VCE= -1.0 Vdc) 85 400 -0.5 -1.2 Classification of hFE(1) Rank B C D Range 85-160 120-200 160-300 E 300-400 TYP DC Current Gain DC Current Gain (V =-10V, I =-50mA, f=30 MHz)CE C
http://www.weitron.com.tw -0.1 -0.2 -0.3 -0.4 -0.5 IB=-4.0mA IB=-3.5mA IB=-3.0mA IB=-2.5mA IB=-2.0mA IB=-1.5mA IB=-1.0mA IB=-0.5mA IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 100 1000 VCE = -1V hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -10 -100 -1000 -10000 VCE(sat) VBE(sat) IC=10IB VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC[mA], COLLECTOR CURRENT -0.1 -10 -100 VCE = -1V IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE -1 -10 -100 -1000 100 f=1MHz IE=0 Cob[pF], CAPACITANCE VCB[V], COLLECTOR-BASE VOLTAGE -1 -10 -100 -1000 100 1000 VCE=-10V fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT IC[mA], COLLECTOR CURRENT FIG.1 Static Characteristic FIG.2 DC Current Gain FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage FIG.4 Base-Emitter On Voltage FIG.5 Collector Output Capacitance FIG.6 Current Gain Bandwidth Product
http://www.weitron.com.tw SS8550 Dim A B C D E G H J K L Min 3.30 1.10 0.38 0.36 4.40 3.43 4.30 Max TO-92 TO-92 Outline Dimensions unit:mm 3.70 1.40 0.55 0.51 4.70 4.70 2.64 14.50 1.270TYP E C H A B D L J K G 2.44 14.10