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TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR ( PNP)
FEATURES
P C : 1 W (T a=25 ) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO V CB=-40V, IE=0 -0.1 μA Emitter cut-off current ICEO V CE=-20V, IE=0 -0.1 μA Emitter cut-off current IEBO V EB=-5V, IC=0 -0.1 uA hFE(1) V CE=-1V, IC=-100mA 85 400 DC current gain hFE(2) V CE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) I C=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) I C=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE(on) V CE=-1V, IC=-10mA -1 V Out capacitance Cob V CB=-10V, IE=0mA,f=1MHZ 20 pF Transition frequency fT V CE=-10V, IC=-50mA,f=30MHZ 100 MHz CLASSIFICATION OF h FE(2) Rank B C D D3 Range 85-160 120-200 160-300 300-400 TO-92 1. EMITTER 2. BASE 3. COLLECTOR B,Sep,2011 TIGER ELECTRONIC CO.,LTD
-1 -10 -100 -1000 100 1000 -0 -1 -2 -3 -50 -100 -150 -200 -250 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -10 -100 -1000 -1 -10 -100 -1000 -10 -100 -1000 -2 -10 -100 100 1000 -0.1 -1 -10 100 -1500 Ta=25℃ -300 Ta=100℃ COMMON EMITTER VCE=-1V hFE —— I C 300 -30-3 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25℃ Static Characteristic -1.0mA -0.7mA -0.9mA -0.6mA -0.5mA -0.8mA -0.4mA -0.3mA -0.2mA IB=-0.1mA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -1500-300 Ta=100℃ Ta=25℃ β=10 -30-3 VBEsat —— I C BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) PC —— T a COLLECTOR POWER DISSIPATION PC (W) AMBIENT TEMPERATURE Ta ( )℃ -1500 -300 Ta=100℃ SS8550Typical Characteristics Ta=25℃ -30 COMMON EMITTER V CE=-1V COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) -1500 -300 Ta=100℃ -300 -30 -30-3 VCEsat —— I C β=10 Ta=25℃ COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) fT —— I C 300 -30-6 COMMON EMITTER V CE= -10V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCB/ VEB IC —— V BE Cob Cib -0.3 -20-3 f=1MHz IE=0/IC=0 Ta=25℃ Cob/ Cib —— CAPACITANCE C (pF) REVERSE BIAS VOLTAGE V (V) B,Sep,2011