SS8550-SOT23 YFWDIODE | Alldatasheet
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Collector Current: I C =-1.5A Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatloVesaB-rotcelloC CBO -40 V VegatloVrettimE-rotcelloC CEO -25 V VegatloVesaB-rettimE EBO -5 V IsuounitnoC-tnerruCrotcelloC C -1.5 A PnoitapissiDrewoProtcelloC C 0.3 W TerutarepmeTnoitcnuJ j 150 TerutarepmeTegarotS stg -55 to 150 h FE(1) Classification Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnoctseTlobmySretemaraP Collector-base breakdown voltage V CBO I C =-100 A, I E =0 -40 V Collector-emitter breakdown voltage V CEO I C =-1mA, I B V52-0= Emitter-base breakdown voltage V EBO I E =-100 A, I C =0 -5 V Itnerrucffo-tucrotcelloC CBO V CB =-40V, I E 1.0-0= A Itnerrucffo-tucrotcelloC CEO V CE =-20V, I B 1-0= A Itnerrucffo-tucrettimE EBO V EB =-5V, I C 1.0-0= A V CE =-1V, I C =-100mA 120 400 V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B V5.0-Am08-= Base-emitter saturation voltage V BE(sat) I C =-800mA, I B V2.1-Am08-= Vegatlovnorettime-esaB BE(on) I C =-1V,V CE V1-Am01-= Cecnaticapactuptuo ob V CB =-10V,I E Fp02zHM1=f,0= fycneuqerfnoitisnarT T V CE = -10V, I C = -50mA,f=30MHz 100 MHz h FE DC current gain Type SS8550 SS8550-L SS8550-H SS8550-J Range 200-350 120-200 144-202 300-400 Marking Y2 SS8550 PNP Transistors 1.Base 2.Emitter 3.Collector Simplified outline(SOT-23) www.yfwdiode.com
-200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -10 -100 -1000 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -300 -400 -500 -600 -700 -800 -900 -1000 100 01-1- -1 -10 -100 -1000 -10 -100 -1000 001-01-1- 100 0 25 50 75 100 125 150 100 150 200 250 300 350 VCE=-1V Ta=25 Ta=100 o C I C V BE — — BASE-EMMITER VOLTAGE V BE (mV) COLLCETOR CURRENT I C (mA) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) β=10 Ta=25 Ta=100 BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat — — Ta=100 Ta=25 500 V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C h FE — — C ob C ib 100 -0.2 f=1MHz I E =0/ I C Ta=25 o C V CB / V EB C ob / C ib — — CAPACITANCE C (pF) REVERSE VOLTAGE V (V) Ta=25 0.2 Ta=100 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat TRANSITION FREQUENCY fT (MHz) VCE-10V Ta=25 o C I C fT — — 500 Pc —— Ta COLLECTOR POWER DISSIPATION Pc (mW) SS8550 www.yfwdiode.com
max. b p cD E e H E L p Qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 bp D e A Lp Q detail X H E E w M v M A B A B 0 1 2 mm scale A 1.1 0.9 c X SOT-23 SS8550 www.yfwdiode.com