SS8550 YIXIN | Alldatasheet
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axial Planar Transistor SS8550 FEA TURES z Collec tor Current.(IC= 1.5A） z Complementary To SS8550. z Collector Dissipation: P C=0 .3W (TC=25°C) APPLICA TIONS z H i g h C o l l e c t o r C u r r e n t . ORDERING INFORMA TION Type No. Marking Package Code SS8550 Y2 SOT-23 MAXIMUM RA TING @ T a=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Ba se Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Cur rent -Continuous -1.5 A PC Collector Dissipation 0.3 W Tj,Tstg Junction and Storage Temperatur e -55~150 ℃ A E J L TO P VIEW M B C H G D K C B E SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 /c97 0/c176 8/c176 All Dimensions in m m EB C ELECTRICAL CHARACTERISTICS @ T a=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-ba se breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-em itter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 B -25 V Emitter-base breakdow n voltage V (BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V ,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V ,IB=0 B -0.1 μA Emitter cut-off current IEBO VEB=-5V ,IC=0 -0.1 μA VCE=-1V ,IC=- 100mA 120 400 DC c urrent gain hFE VCE=-1V ,IC=- 800mA 40 Collector-em itter saturation voltage VCE(s at) IC=-800mA, IB= -80mA B -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA B -1.2 V Transition frequency fT VCE=-10V, IC= -50mA f=30MHz 100 MHz Output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF Base-emitter voltage VBEF IE=-1.5A -1.6 V 1of 2 A ll data sheet.com
TION OF h FE(1 Rank L H J Rang e 120-200 200-350 300-400 Silicon Epit axial Planar Transistor SS8550 TYPICAL CHARACTERISTICS @ T a=25℃ unless otherwise specified 2of 2 A ll data sheet.com