SS8550 SHUNYE | Alldatasheet

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Technical content

FEATURES

MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Col lector-Base Voltage -40 V V CEO Col lector-Emitter Voltage -25 V V EBO Emi tter-Base Voltage -5 V I C Colle ctor Current -1.5 A P C Colle ctor Power Dissipation 300 mW R ΘJA Ther mal Resistance From Junction To Ambient 417 T J T stg Operation Junction and Storage Temperature Range -55 +150 ELECT RICAL CHARACTERISTICS (T a =25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Colle ctor-base breakdown voltage V (BR)CBO I C =-100µA, I E -40 V Colle ctor-emitter breakdown voltage V (BR)CEO I C =-0.1mA, I B -25 V Emitt er-base breakdown voltage V (BR)EBO I E =-100µA, I C V Colle ctor cut-off current I CBO V CB =-40V, I E -100 nA Colle ctor cut-off current I CEO V CE =-20V, I B -100 nA Emitt er cut-off current I EBO V EB =-5V, I C -100 nA h FE(1) V CE =-1V, I C =-100mA 120 400 DC cu rrent gain h FE(2) V CE =-1V, I C =-800mA Colle ctor-emitter saturation voltage V CE(sat) I C =-800mA, I B =-80mA -0.5 V Base- emitter saturation voltage V BE(sat) I C =-800mA, I B =-80mA -1.2 V Base- emitter voltage V BE V CE =-1V, I C =-10mA -1 V Trans ition frequency f T V CE =-10V,I C =-50mA , f=30MHz 100 MHz Colle ctor output capacitance C ob V CB =-10V, I E =0, f=1MHz 20 pF CLASS IFICATION OF h FE(1) RANK L H J RANGE 120 200 200 350 300 400 MARKI NG SOT 1. BAS E 2. EMITTER 3. COLLECTOR SS8550 TRANSISTOR PNP MARKING: Y2 www.shunyegroup.com.cn V2.22

-200 -300 400 -500 -600 -700 -800 -900 -1000 -0.1 -10 -100 -1000 -0.0 -0.5 -1 -20 -40 -60 -80 -100 -120 -140 -160 -180 -0.1 -10 -1000 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -10 -100 1000 100 -10 -10 -100 1000 -100 -1000 -10 -10 100 100 125 150 100 150 200 250 300 350 VCE=-1V Ta=25 Ta=100 o C I C V BE BASE-EMMI T ER VOLTAGE V BE (mV) COLLCETOR CURRENT I C (mA) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA Stati c Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) β =10 Ta=25 Ta=100 BASE-EMITTE R SAT URATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I C V BEsat Ta=100 Ta=25 500 V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C h FE C ob C ib 100 -0.2 f=1MHz I E =0/ I C Ta=25 o C V CB / V EB C ob / C ib CAPACIT ANCE C ( p F REVERSE VOLTAGE V ( V Ta=25 0.2 Ta=100 β =10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I C (mA) VCE-10V Ta=25 o C I C fT —— 500 Pc —— T a COLLECTOR PO WER DISSIPATION Pc (mW) AMBIENT TE M PERATURE Ta ( ) www.shunyegroup.com.cn V2.22 SS8550

M a x A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e 1.800 2.000 0.071 0.079 L 0.300 0.500 0.012 0.020 θ

0.550 REF

0.022 REF

0.950 TYP

0.037 TYP

T -23 Package Outline Dimensions SO T -23 Suggested Pad Layout www.shunyegroup.com.cn V2.22 SS8550

www.shunyegroup.com.cn V2.22 SS8550