SS8550 SECOS | Alldatasheet
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Technical content
General Purpose Transistor 01-June-2005 Rev. B Page 1 of 2
FEATURES
PCM : 0.3 W z Collector Current ICM : - 1.5 A z Collector-base voltage V(BR)CBO : - 40 V z Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V Ic = 100 μA, IE = 0 BVCEO -25 - - V Ic = -0.1mA, I B = 0 BVEBO -5 - - V I E = -100μA, IC = 0 ICBO - - -0.1 μA V CB = -40 V, IE = 0 ICEO - - -0.1 μA V CE = -20V, IB = 0 IEBO - - -0.1 μA V EB = -5V, IC = 0 VCE(sat) - - 0.5 V I C = -800 mA, IB = -80mA VBE(sat)1 - - 1.2 V I C = -800 mA, IB = -80mA *hFE1 120 - 350 - V CE= -1V, IC=-100mA *hFE2 40 - - - V CE = -1V, IC = -800mA fT 100 - - MHz V CE = -10V, IC = -50mA, f = 30MHz COB - - 20 pF V CB= -10V, IE=0, f=1MHz CLASSIFICATION OF h FE(1) Rank L H J Range 120 - 200 200-350 300-400 Marking Y2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector Base Emitter Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 K J C H L A B S GV 1 2 D Top View Collector Base Emitter
General Purpose Transistor 01-June-2005 Rev. B Page 2 of 2 CHARACTERISTIC CURVES