SS8550 UMW | Alldatasheet

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Technical content

SS8550 TRANSISTOR (PNP)

FEATURES

 High Collector Current  Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A PC Collector Power Dissipation 300 mW RΘJA Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -100 nA Collector cut-off current ICEO VCE=-20V, IB=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2) VCE=-1V, IC=-800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V Transition frequency fT VCE=-10V,IC=-50mA , f=30MHz 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120–200 200–350 300–400 MARKING Y2 SOT-23 Plastic-Encapsulate Transistors UMW RU MW SS8550 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 1www.umw-ic.com 友台半导体有限公司

-200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -10 -100 -1000 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -300 -400 -500 -600 -700 -800 -900 -1000 100 -1 -10 -1000-100-10-1 -10 -100 -1000 -1 -10 -100 100 0 25 100 125 15050 75 100 150 200 250 300 350 E=-1VVC Ta=25℃ =100Ta o C ICVBE —— BASE-EMMITER VOLTAGE VBE (mV) COLLCETOR CURRENT IC (mA) 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA IB=0.1mA Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) β=10 Ta=25℃ Ta=100℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) ICVBEsat —— Ta=100℃ Ta=25℃ 500 VCE=-1V DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IChFE —— Cob Cib 100 -0.2 =1MHzf IE=0/ IC=0 a=25T o C VCB/ VEBCob/ Cib —— CAPACITANCE C (pF) REVERSE VOLTAGE V (V) Ta=25℃ 0.2 Ta=100℃ β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) ICVCEsat —— TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE-10V Ta=25 o C ICfT —— 500 Pc —— Ta COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ 2www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW R UMW SS8550

A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout 3www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW RU MW SS8550

4www.umw-ic.com 友台半导体有限公司 SOT-23 Plastic-Encapsulate Transistors UMW RU MW SS8550